公开(公告)号：FR2807208A1

公开(公告)日：2001-10-05

申请号：FR0003983

申请日：2000-03-29

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  FOURNEL RICHARD ,  DUTARTRE DIDIER ,  RIBOT PASCAL ,  PAOLI MARYSE

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/8239

Abstract: Non-volatile memory semiconductor device comprises silicon based semiconductor substrate (SB) containing a source region (S) and a drain region (D), a control gate (GC) and a floating gate (GF). The floating gate extends between the source and drain regions formed in the substrate, and the control gate is situated above the floating gate and juts out with respect to source and drain regions. An Independent claim is included for the fabrication of the non-volatile memory semiconductor device.

公开(公告)号：FR2807208B1

公开(公告)日：2003-09-05

申请号：FR0003983

申请日：2000-03-29

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  FOURNEL RICHARD ,  DUTARTRE DIDIER ,  RIBOT PASCAL ,  PAOLI MARYSE

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/8239

Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.