公开(公告)号：FR2900276B1

公开(公告)日：2008-09-12

申请号：FR0603684

申请日：2006-04-25

Applicant: ST MICROELECTRONICS SA

Inventor： GROS JEAN MICHAEL ,  BENOIT DANIEL ,  REGOLINI JORGE LUIS

IPC: H01L21/205

公开(公告)号：FR2779573A1

公开(公告)日：1999-12-10

申请号：FR9807061

申请日：1998-06-05

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  CHANTRE ALAIN ,  REGOLINI JORGE LUIS

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/737 ,  H01L29/732

Abstract: The bipolar transistor comprises a base (Be) of heterojunction silicon-germanium. The base is in block (8) of layers of silicon and silicon-germanium on an initial layer (17) of silicon nitride spread on a region with lateral isolation (5). An internal collector (4) is enclosed and situated inside a window in the layer of silicon nitride. The fabrication process includes the growth of a layer of silicon dioxide on a block of semiconductor. A layer of silicon nitride (Si3N4) is then deposited, and etched until the layer of silicon dioxide. A chemical process is used to remove a portion of the layer of silicon dioxide within the window. The layer of silicon nitride has a thickness of about 300 Angstrom, and that of silicon dioxide about 200 Angstrom.

公开(公告)号：FR2900276A1

公开(公告)日：2007-10-26

申请号：FR0603684

申请日：2006-04-25

Applicant: ST MICROELECTRONICS SA

Inventor： GROS JEAN MICHAEL ,  BENOIT DANIEL ,  REGOLINI JORGE LUIS

IPC: H01L21/205

Abstract: Procédé de dépôt d'un matériau à base de silicium sur un substrat par une technologie de dépôt par couche atomique assistée par plasma, le procédé étant réalisé en plusieurs cycles (C1, C2,...,Cn), chaque cycle comprenant les étapes consistant à :- exposer le substrat à un premier précurseur qui est un précurseur organométallique du silicium et- appliquer un plasma d'au moins un second précurseur différent du premier précurseur.

公开(公告)号：FR2779573B1

公开(公告)日：2001-10-26

申请号：FR9807061

申请日：1998-06-05

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  CHANTRE ALAIN ,  REGOLINI JORGE LUIS

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/737 ,  H01L29/732

Abstract: The bipolar transistor comprises a base (Be) of heterojunction silicon-germanium. The base is in block (8) of layers of silicon and silicon-germanium on an initial layer (17) of silicon nitride spread on a region with lateral isolation (5). An internal collector (4) is enclosed and situated inside a window in the layer of silicon nitride. The fabrication process includes the growth of a layer of silicon dioxide on a block of semiconductor. A layer of silicon nitride (Si3N4) is then deposited, and etched until the layer of silicon dioxide. A chemical process is used to remove a portion of the layer of silicon dioxide within the window. The layer of silicon nitride has a thickness of about 300 Angstrom, and that of silicon dioxide about 200 Angstrom.