公开(公告)号：JPH11219222A

公开(公告)日：1999-08-10

申请号：JP32139798

申请日：1998-10-27

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: G05F1/10 ,  G05F3/18

Abstract: PROBLEM TO BE SOLVED: To improve voltage control characteristics in a voltage stabilizing circuit for which a semiconductor element is inserted between input/output terminals. SOLUTION: In this switching D.C. voltage control circuit provided with the input terminal, the output terminal, a reference terminal and a control terminal, a gate turn-off thyristor Th for connecting a main terminal to the input/output terminals, a resistor R connected between the input terminal and the cathode gate of the thyristor Th, a transistor for connecting the main terminal to the cathode gate of the thyristor Th and the reference terminal and an avalanche diode Z connected between the output terminal and the base of the transistor are provided.

公开(公告)号：FR2818805B1

公开(公告)日：2003-04-04

申请号：FR0016835

申请日：2000-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/747 ,  H03K17/72

Abstract: The invention concerns a bidirectional switch formed in a N-type semiconductor substrate, comprising a first main vertical thyristor whereof the rear face layer is of P-type conductivity, a second main vertical thyristor whereof the rear face layer is N-type, a P-type peripheral region extending from the front face to the rear face, a first metallization covering the rear face, a second metallization on the front face side connecting the front face layers of the first and second thyristor, and a N-type gate region in part of the upper surface of the peripheral region.

公开(公告)号：FR2782859B1

公开(公告)日：2000-11-17

申请号：FR9810929

申请日：1998-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： MAGNON DIDIER ,  GUITTON FABRICE ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/74 ,  H01L21/822 ,  H01L27/06 ,  H01L29/744 ,  H03K17/16 ,  H03K17/732 ,  H03K17/72 ,  H03K17/22 ,  H01L27/082

Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.

公开(公告)号：FR2797113B1

公开(公告)日：2001-10-12

申请号：FR9909986

申请日：1999-07-28

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  LADIRAY OLIVIER ,  SIMONNET JEAN MICHEL

IPC: H02M1/08 ,  H03K17/13 ,  H01L27/06

Abstract: The circuit for the zero voltage control of a bidirectional switch (TR) comprises a pair of complementary transistors (Q1, Q2) connected in parallel between the gate (G) and the reference terminal (A1) of bidirectional switch, where the gate of bidirectional switch is connected to a control signal source via a resistor (R2), and the control electrodes of transistors are connected to the second terminal (A2) of bidirectional switch via a high-value resistor (R1), a pair of Zener diodes (Z1, Z2) connected between the second resistor (R1) and each control electrode of transistors according to polarity so to turn the transistors on when the Zener threshold is passed. The control circuit is implemented in the same semiconductor substrate as the bidirectional switch (TR). In the first embodiment, the control electrodes of transistors are interconnected, and the Zener diodes (Z1, Z2) are connected in series and in opposition between the second resistor (R1) and the point of interconnection of control electrodes. In the second embodiment, the control electrodes of transistors are separated, and the Zener diodes are connected in opposition between the second resistor (R1) and each electrode. The second resistor (R1) is implemented in the same part of substrate, which is of first conductivity type, as the bidirectional switch (TR). The Zener diodes (Z1, Z2) are implemented on the side of front face of the substrate in a layer of second conductivity type, and comprise two regions of first conductivity type joined to metallic contact zones and a region formed by diffusion in depth from the front face in contact with the layer. The first Zener diode (Z1) is formed in the same part of substrate as one of the transistors (Q1). The second Zener diode (Z2) is formed in a part of substrate which is distinct from the part where the second transistor (Q2) is formed, or in the same part of substrate as the second transistor (Q2). The complementary transistors (Q1, Q2) are of bipolar type, or the MOS type.

公开(公告)号：FR2797113A1

公开(公告)日：2001-02-02

申请号：FR9909986

申请日：1999-07-28

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  LADIRAY OLIVIER ,  SIMONNET JEAN MICHEL

IPC: H02M1/08 ,  H03K17/13 ,  H01L27/06

Abstract: The circuit for the zero voltage control of a bidirectional switch (TR) comprises a pair of complementary transistors (Q1, Q2) connected in parallel between the gate (G) and the reference terminal (A1) of bidirectional switch, where the gate of bidirectional switch is connected to a control signal source via a resistor (R2), and the control electrodes of transistors are connected to the second terminal (A2) of bidirectional switch via a high-value resistor (R1), a pair of Zener diodes (Z1, Z2) connected between the second resistor (R1) and each control electrode of transistors according to polarity so to turn the transistors on when the Zener threshold is passed. The control circuit is implemented in the same semiconductor substrate as the bidirectional switch (TR). In the first embodiment, the control electrodes of transistors are interconnected, and the Zener diodes (Z1, Z2) are connected in series and in opposition between the second resistor (R1) and the point of interconnection of control electrodes. In the second embodiment, the control electrodes of transistors are separated, and the Zener diodes are connected in opposition between the second resistor (R1) and each electrode. The second resistor (R1) is implemented in the same part of substrate, which is of first conductivity type, as the bidirectional switch (TR). The Zener diodes (Z1, Z2) are implemented on the side of front face of the substrate in a layer of second conductivity type, and comprise two regions of first conductivity type joined to metallic contact zones and a region formed by diffusion in depth from the front face in contact with the layer. The first Zener diode (Z1) is formed in the same part of substrate as one of the transistors (Q1). The second Zener diode (Z2) is formed in a part of substrate which is distinct from the part where the second transistor (Q2) is formed, or in the same part of substrate as the second transistor (Q2). The complementary transistors (Q1, Q2) are of bipolar type, or the MOS type.

公开(公告)号：FR2782859A1

公开(公告)日：2000-03-03

申请号：FR9810929

申请日：1998-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： MAGNON DIDIER ,  GUITTON FABRICE ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/74 ,  H01L21/822 ,  H01L27/06 ,  H01L29/744 ,  H03K17/16 ,  H03K17/732 ,  H03K17/72 ,  H03K17/22 ,  H01L27/082

Abstract: The unidirectional commutation or switch circuit comprises a thyristor (GTO) with its trigger polarized off in the commutator block (5). There is a capacitor (C') in parallel with a controlled transistor (T), supply terminals (2,3), and the load (1). The controlled transistor (T) is a bipolar transistor, and a resistor (R1) connected between the anode and cathode triggers of thyristor. The transistor base is connected via a reference diode (Z) to the midpoint of a resistor bridge (R2,R3). A bidirectional communication circuit can be constructed by two unidirectional commutation circuits in antiparallel connection. The commutation circuit can be realized in monolithic form on a semiconductor substrate, according to two embodiments. In the monolithic realizations the first zone comprises the thyristor (GTO) in lateral form with the cathode trigger controlled transistor (T) and the diode (Z). The collector of transistor (T) of npn type is connected to a strongly doped region of n type, or to an n type metallized ring.

公开(公告)号：FR2834386B1

公开(公告)日：2004-04-02

申请号：FR0117044

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L27/08 ,  H01L29/74 ,  H01L29/747

Abstract: The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate ( 1 ) comprising first and second vertical thyristors (Th 1 , Th 2 ), a first electrode (A 2 ) of the first thyristor, on the front side of the component, corresponding to a first N-type region ( 6 ) formed in a first P-type box ( 5 ), the first box corresponding to a first electrode (A 2 ) of the second thyristor, the first box containing a second N-type region ( 8 ); and a pilot structure comprising, above an extension of a second electrode region ( 4 ) of the second thyristor, a second P-type box ( 11 ) containing third and fourth N-type regions, the third region ( 12 ) and a portion of the second box ( 11 ) being connected to a gate terminal (G), the fourth region ( 13 ) being connected to the second region ( 8 ).

公开(公告)号：FR2797525B1

公开(公告)日：2001-10-12

申请号：FR9910413

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

公开(公告)号：FR2818806B1

公开(公告)日：2003-03-21

申请号：FR0016836

申请日：2000-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/747 ,  H03K17/06 ,  H03K17/72

Abstract: The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G 1 ), first (Th 1 ) and second (Th 2 ) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region ( 6 ), and a metallization (A 1, A 2 ) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.

公开(公告)号：FR2797524B1

公开(公告)日：2001-10-12

申请号：FR9910412

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.