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公开(公告)号：FR2808621A1
公开(公告)日：2001-11-09
申请号：FR0005804
申请日：2000-05-05
Applicant: ST MICROELECTRONICS SA
Inventor： GALTIE FRANCK , LADIRAY OLIVIER
IPC: H01L21/761 , H01L27/08 , H01L27/06 , H02M7/162
Abstract: A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating wall separates a substrate in two portions, a first portion includes on its lower surface side an anode region and on its upper surface side a cathode region, the second portion includes on its lower surface side a cathode region and on its upper surface side an anode region. The isolating wall surrounding each of the components extending towards the main electrode on the side which carries no common metallization and including in this extended region an N-type area, the two areas being connected together to a common control terminal.
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公开(公告)号：FR2797525B1
公开(公告)日：2001-10-12
申请号：FR9910413
申请日：1999-08-09
Applicant: ST MICROELECTRONICS SA
Inventor： DUCLOS FRANCK , SIMONNET JEAN MICHEL , LADIRAY OLIVIER
IPC: H01L29/747
Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.
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公开(公告)号：DE69937388D1
公开(公告)日：2007-12-06
申请号：DE69937388
申请日：1999-08-24
Applicant: ST MICROELECTRONICS SA
Inventor： GUITTON FABRICE , MAGNON DIDIER , SIMONNET JEAN-MICHEL , LADIRAY OLIVIER
IPC: H01L29/74 , H03K17/16 , H01L21/822 , H01L27/06 , H01L29/744 , H03K17/732
Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.
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公开(公告)号：FR2797113B1
公开(公告)日：2001-10-12
申请号：FR9909986
申请日：1999-07-28
Applicant: ST MICROELECTRONICS SA
Inventor： DUCLOS FRANCK , LADIRAY OLIVIER , SIMONNET JEAN MICHEL
Abstract: The circuit for the zero voltage control of a bidirectional switch (TR) comprises a pair of complementary transistors (Q1, Q2) connected in parallel between the gate (G) and the reference terminal (A1) of bidirectional switch, where the gate of bidirectional switch is connected to a control signal source via a resistor (R2), and the control electrodes of transistors are connected to the second terminal (A2) of bidirectional switch via a high-value resistor (R1), a pair of Zener diodes (Z1, Z2) connected between the second resistor (R1) and each control electrode of transistors according to polarity so to turn the transistors on when the Zener threshold is passed. The control circuit is implemented in the same semiconductor substrate as the bidirectional switch (TR). In the first embodiment, the control electrodes of transistors are interconnected, and the Zener diodes (Z1, Z2) are connected in series and in opposition between the second resistor (R1) and the point of interconnection of control electrodes. In the second embodiment, the control electrodes of transistors are separated, and the Zener diodes are connected in opposition between the second resistor (R1) and each electrode. The second resistor (R1) is implemented in the same part of substrate, which is of first conductivity type, as the bidirectional switch (TR). The Zener diodes (Z1, Z2) are implemented on the side of front face of the substrate in a layer of second conductivity type, and comprise two regions of first conductivity type joined to metallic contact zones and a region formed by diffusion in depth from the front face in contact with the layer. The first Zener diode (Z1) is formed in the same part of substrate as one of the transistors (Q1). The second Zener diode (Z2) is formed in a part of substrate which is distinct from the part where the second transistor (Q2) is formed, or in the same part of substrate as the second transistor (Q2). The complementary transistors (Q1, Q2) are of bipolar type, or the MOS type.
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公开(公告)号：FR2802366A1
公开(公告)日：2001-06-15
申请号：FR9915773
申请日：1999-12-14
Applicant: ST MICROELECTRONICS SA
Inventor： LADIRAY OLIVIER
Abstract: A pulse-controlled analog flip-flop includes a charge element; a charge storage element connected to the charge element; an element for detecting the voltage across the storage element; and an element for discharging the storage element when the detection element has detected that the voltage across the storage element has reached a predetermined threshold.
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Patent Agency Ranking
公开(公告)号：FR2797113A1
公开(公告)日：2001-02-02
申请号：FR9909986
申请日：1999-07-28
Applicant: ST MICROELECTRONICS SA
Inventor： DUCLOS FRANCK , LADIRAY OLIVIER , SIMONNET JEAN MICHEL
Abstract: The circuit for the zero voltage control of a bidirectional switch (TR) comprises a pair of complementary transistors (Q1, Q2) connected in parallel between the gate (G) and the reference terminal (A1) of bidirectional switch, where the gate of bidirectional switch is connected to a control signal source via a resistor (R2), and the control electrodes of transistors are connected to the second terminal (A2) of bidirectional switch via a high-value resistor (R1), a pair of Zener diodes (Z1, Z2) connected between the second resistor (R1) and each control electrode of transistors according to polarity so to turn the transistors on when the Zener threshold is passed. The control circuit is implemented in the same semiconductor substrate as the bidirectional switch (TR). In the first embodiment, the control electrodes of transistors are interconnected, and the Zener diodes (Z1, Z2) are connected in series and in opposition between the second resistor (R1) and the point of interconnection of control electrodes. In the second embodiment, the control electrodes of transistors are separated, and the Zener diodes are connected in opposition between the second resistor (R1) and each electrode. The second resistor (R1) is implemented in the same part of substrate, which is of first conductivity type, as the bidirectional switch (TR). The Zener diodes (Z1, Z2) are implemented on the side of front face of the substrate in a layer of second conductivity type, and comprise two regions of first conductivity type joined to metallic contact zones and a region formed by diffusion in depth from the front face in contact with the layer. The first Zener diode (Z1) is formed in the same part of substrate as one of the transistors (Q1). The second Zener diode (Z2) is formed in a part of substrate which is distinct from the part where the second transistor (Q2) is formed, or in the same part of substrate as the second transistor (Q2). The complementary transistors (Q1, Q2) are of bipolar type, or the MOS type.
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公开(公告)号：FR2782859A1
公开(公告)日：2000-03-03
申请号：FR9810929
申请日：1998-08-28
Applicant: ST MICROELECTRONICS SA
Inventor： MAGNON DIDIER , GUITTON FABRICE , SIMONNET JEAN MICHEL , LADIRAY OLIVIER
IPC: H01L29/74 , H01L21/822 , H01L27/06 , H01L29/744 , H03K17/16 , H03K17/732 , H03K17/72 , H03K17/22 , H01L27/082
Abstract: The unidirectional commutation or switch circuit comprises a thyristor (GTO) with its trigger polarized off in the commutator block (5). There is a capacitor (C') in parallel with a controlled transistor (T), supply terminals (2,3), and the load (1). The controlled transistor (T) is a bipolar transistor, and a resistor (R1) connected between the anode and cathode triggers of thyristor. The transistor base is connected via a reference diode (Z) to the midpoint of a resistor bridge (R2,R3). A bidirectional communication circuit can be constructed by two unidirectional commutation circuits in antiparallel connection. The commutation circuit can be realized in monolithic form on a semiconductor substrate, according to two embodiments. In the monolithic realizations the first zone comprises the thyristor (GTO) in lateral form with the cathode trigger controlled transistor (T) and the diode (Z). The collector of transistor (T) of npn type is connected to a strongly doped region of n type, or to an n type metallized ring.
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公开(公告)号：DE60029168T2
公开(公告)日：2007-08-23
申请号：DE60029168
申请日：2000-08-08
Applicant: ST MICROELECTRONICS SA
Inventor： DUCLOS FRANCK , SIMONNET JEAN-MICHEL , LADIRAY OLIVIER
IPC: H01L29/747
Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.
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公开(公告)号：FR2816133B1
公开(公告)日：2003-04-04
申请号：FR0014001
申请日：2000-10-31
Applicant: ST MICROELECTRONICS SA
Inventor： DUCLOS FRANK , LADIRAY OLIVIER , HEURTIER JEROME
IPC: H03K5/1534 , H03K19/013 , H03K17/56
Abstract: The invention concerns a switching circuit ( 20 ) adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN 2 ) whereof the transmitter is connected to the input terminal; a second transistor (TP 2 ) whereof a control electrode is connected, through a first resistor (Re 2 ), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp 2 ); and a third transistor (TN 3 ) connecting an output terminal ( 22 ) of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN 2 ).
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公开(公告)号：FR2808621B1
公开(公告)日：2002-07-19
申请号：FR0005804
申请日：2000-05-05
Applicant: ST MICROELECTRONICS SA
Inventor： GALTIE FRANCK , LADIRAY OLIVIER
IPC: H01L21/761 , H01L27/08 , H01L27/06 , H02M7/162
Abstract: A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating wall separates a substrate in two portions, a first portion includes on its lower surface side an anode region and on its upper surface side a cathode region, the second portion includes on its lower surface side a cathode region and on its upper surface side an anode region. The isolating wall surrounding each of the components extending towards the main electrode on the side which carries no common metallization and including in this extended region an N-type area, the two areas being connected together to a common control terminal.
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