公开(公告)号：JPH07142730A

公开(公告)日：1995-06-02

申请号：JP13962094

申请日：1994-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532

Abstract: PURPOSE: To improve the adhesive strength of an interface between layers of insulating materials during the manufacture of an integrated circuit which has a multilayered structure. CONSTITUTION: For a method of improving the adhesion state of an interface between the insulating material layers during the manufacture of a semiconductor device, a 1st insulating layer 1 is formed of an insulating material on a circuit structure 7 which is formed on a substrate 6 of a semiconductor substrate, then a 2nd insulating layer 3 of an insulating material is out over the 1st insulating layer 1, and a thin oxide layer 2 is formed in an adhered state between the 1st and 2nd insulating layers 1 and 3. This inserted oxide layer 2 functions as an adhesion layer between the two superimposed insulating layers 1 and 3.

公开(公告)号：DE69333722T2

公开(公告)日：2005-12-08

申请号：DE69333722

申请日：1993-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532 ,  H01L23/29

Abstract: A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).

公开(公告)号：DE69333722D1

公开(公告)日：2005-01-20

申请号：DE69333722

申请日：1993-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532 ,  H01L23/29

Abstract: A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).