公开(公告)号：JPH07142730A

公开(公告)日：1995-06-02

申请号：JP13962094

申请日：1994-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532

Abstract: PURPOSE: To improve the adhesive strength of an interface between layers of insulating materials during the manufacture of an integrated circuit which has a multilayered structure. CONSTITUTION: For a method of improving the adhesion state of an interface between the insulating material layers during the manufacture of a semiconductor device, a 1st insulating layer 1 is formed of an insulating material on a circuit structure 7 which is formed on a substrate 6 of a semiconductor substrate, then a 2nd insulating layer 3 of an insulating material is out over the 1st insulating layer 1, and a thin oxide layer 2 is formed in an adhered state between the 1st and 2nd insulating layers 1 and 3. This inserted oxide layer 2 functions as an adhesion layer between the two superimposed insulating layers 1 and 3.

公开(公告)号：DE69432352D1

公开(公告)日：2003-04-30

申请号：DE69432352

申请日：1994-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  ZANOTTI LUCA ,  QUEIROLO GIUSEPPE

IPC: H01L23/29 ,  H01L23/31 ,  H01L23/532

公开(公告)号：IT1316286B1

公开(公告)日：2003-04-10

申请号：ITMI20000065

申请日：2000-01-20

Applicant: ST MICROELECTRONICS SRL

Inventor： ZANOTTI LUCA

IPC: C04B41/53 ,  C04B41/91 ,  C23C16/44 ,  C23C16/509 ,  H01L21/311

Abstract: The present invention relates an etch process of a dielectric film deposited on a substrate, characterized by using a chamber of PECVD type having an upper electrode coupled with a RF source and a lower electrode connected to ground on which a silicon substrate is placed. The etch of the dielectric film is obtained by means of a plurality of active gases mixed with at least one conveyance gas so as to obtain a low rate of etch and an uniform etch of said deposited dielectric film.

公开(公告)号：ITMI20000065D0

公开(公告)日：2000-01-20

申请号：ITMI20000065

申请日：2000-01-20

Applicant: ST MICROELECTRONICS SRL

Inventor： ZANOTTI LUCA

IPC: C04B41/53 ,  C04B41/91 ,  C23C16/44 ,  C23C16/509 ,  H01L21/311

Abstract: The present invention relates an etch process of a dielectric film deposited on a substrate, characterized by using a chamber of PECVD type having an upper electrode coupled with a RF source and a lower electrode connected to ground on which a silicon substrate is placed. The etch of the dielectric film is obtained by means of a plurality of active gases mixed with at least one conveyance gas so as to obtain a low rate of etch and an uniform etch of said deposited dielectric film.

公开(公告)号：ITTO20090868A1

公开(公告)日：2011-05-13

申请号：ITTO20090868

申请日：2009-11-12

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRERA MARCO ,  ZANOTTI LUCA

公开(公告)号：IT1314142B1

公开(公告)日：2002-12-04

申请号：ITMI992650

申请日：1999-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： FORABOSCHI ALESSANDRA ,  ZANOTTI LUCA

IPC: H01L21/336 ,  H01L21/8247 ,  H01L23/31 ,  H01L29/417 ,  H01L29/423

公开(公告)号：IT202000001879A1

公开(公告)日：2021-07-31

申请号：IT202000001879

申请日：2020-01-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VILLA FLAVIO FRANCESCO ,  ZANOTTI LUCA ,  NOMELLINI ANDREA ,  SEGHIZZI LUCA

IPC: H01L20060101

公开(公告)号：DE69333722T2

公开(公告)日：2005-12-08

申请号：DE69333722

申请日：1993-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532 ,  H01L23/29

Abstract: A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).

公开(公告)号：ITMI992650A1

公开(公告)日：2001-06-20

申请号：ITMI992650

申请日：1999-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： FORABOSCHI ALESSANDRA ,  ZANOTTI LUCA

IPC: H01L21/336 ,  H01L21/8247 ,  H01L23/31 ,  H01L29/417 ,  H01L29/423

公开(公告)号：DE69333722D1

公开(公告)日：2005-01-20

申请号：DE69333722

申请日：1993-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BACCHETTA MAURIZIO ,  BACCI LAURA ,  ZANOTTI LUCA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/532 ,  H01L23/29

Abstract: A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).