公开(公告)号：ITMI20020931A1

公开(公告)日：2003-11-03

申请号：ITMI20020931

申请日：2002-05-02

Applicant: ST MICROELECTRONICS SRL

Inventor： ALBA SIMONE ,  COLOMBO ROBERTO ,  CIOVACCO FRANCESCO ,  SAVARDI CHIARA

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8234

公开(公告)号：DE60218643D1

公开(公告)日：2007-04-19

申请号：DE60218643

申请日：2002-06-28

Applicant: ST MICROELECTRONICS SRL

Inventor： CIOVACCO FRANCESCO ,  SAVARDI CHIARA ,  COLOMBO ROBERTO

IPC: H01L21/762 ,  H01L21/3065 ,  H01L21/308

Abstract: A process for forming trenches with an oblique profile and rounded top corners, including the steps of: in a semiconductor wafer (20), through a first polymerizing etch, forming depressions (28) delimited by rounded top corners (29); and through a second polymerizing etch, opening trenches (31) at the depressions (29). The second polymerizing etch is made in variable plasma conditions, so that the trenches (31) have oblique walls (37) with a constant slope ( alpha ).

公开(公告)号：ITMI20031591A1

公开(公告)日：2005-02-02

申请号：ITMI20031591

申请日：2003-08-01

Applicant: ST MICROELECTRONICS SRL

Inventor： CIOVACCO FRANCESCO ,  COLOMBO ROBERTO

IPC: H01L21/3065 ,  H01L21/308 ,  H01L31/109 ,  H05K20060101

公开(公告)号：ITMI20020931D0

公开(公告)日：2002-05-02

申请号：ITMI20020931

申请日：2002-05-02

Applicant: ST MICROELECTRONICS SRL

Inventor： ALBA SIMONE ,  COLOMBO ROBERTO ,  CIOVACCO FRANCESCO ,  SAVARDI CHIARA

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8234