8.
    发明专利
    未知

    公开(公告)号:DE60218643D1

    公开(公告)日:2007-04-19

    申请号:DE60218643

    申请日:2002-06-28

    Abstract: A process for forming trenches with an oblique profile and rounded top corners, including the steps of: in a semiconductor wafer (20), through a first polymerizing etch, forming depressions (28) delimited by rounded top corners (29); and through a second polymerizing etch, opening trenches (31) at the depressions (29). The second polymerizing etch is made in variable plasma conditions, so that the trenches (31) have oblique walls (37) with a constant slope ( alpha ).

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