公开(公告)号：DE69620199D1

公开(公告)日：2002-05-02

申请号：DE69620199

申请日：1996-12-16

Applicant: ST MICROELECTRONICS SRL

Inventor： GHIO EMILIO ,  ALBA SIMONE ,  COLOGNESE ANDREA

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8247

Abstract: The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes, and comprises an annealing treatment at relatively low temperature (430 DEG C) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.

公开(公告)号：DE69627672D1

公开(公告)日：2003-05-28

申请号：DE69627672

申请日：1996-12-16

Applicant: ST MICROELECTRONICS SRL

Inventor： GHIO EMILIO ,  ALBA SIMONE ,  COLOGNESE ANDREA ,  MAUGAIN FRANCOIS ,  RIVERA GIOVANNI

IPC: H01L21/66 ,  H01L29/00

Abstract: The method described provides for the following operations: forming cells of EEPROM type on a wafer with source (S), drain (D) and control gate (G) surface terminals (pads), subjecting the cells to UV radiation so as to erase them thereby fixing a reference threshold voltage, applying programming voltages of preset value to one of the cells and measuring the corresponding threshold voltages, subjecting this cell to UV radiation so as to restore its threshold to the reference value, subjecting the wafer to the plasma treatment to be assessed, measuring the threshold voltages of the cells and comparing them with the reference threshold voltage so as to derive from the comparison information on the alterations induced on the dielectrics formed on the wafer and on the distribution of the plasma potential. The method guarantees high sensitivity of measurement, great reliability and reproducibility of the measurements and can be used with advantage both in the design of equipment for plasma treatments and in the fabrication of semiconductor devices in order to increase production yield.