公开(公告)号：DE60131094D1

公开(公告)日：2007-12-06

申请号：DE60131094

申请日：2001-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： MOSCATELLI ALESSANDRO ,  CROCE GIUSEPPE

IPC: H01L29/423 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/08 ,  H01L29/51 ,  H01L29/78

Abstract: A metal oxide semiconductor transistor (200) integrated in a wafer of semiconductor material (30) and comprising a gate structure (3, 11) located on a surface of the said wafer and including a gate oxide layer (3). The transistor (200) is characterized in that the said gate oxide layer (3) includes a first portion (4) having a first thickness (t1) and a second portion (5) having a second thickness (t2) differing from the first thickness.

公开(公告)号：ITMI20121244A1

公开(公告)日：2014-01-18

申请号：ITMI20121244

申请日：2012-07-17

Applicant: ST MICROELECTRONICS SRL

Inventor： CROCE GIUSEPPE ,  PALEARI ANDREA

公开(公告)号：ITMI20072341A1

公开(公告)日：2009-06-15

申请号：ITMI20072341

申请日：2007-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： CROCE GIUSEPPE ,  MONTANINI PIETRO ,  MOTTURA MARTA

公开(公告)号：ITMI20022634A1

公开(公告)日：2004-06-14

申请号：ITMI20022634

申请日：2002-12-13

Applicant: ST MICROELECTRONICS SRL

Inventor： CROCE GIUSEPPE ,  FANTINI PAOLO ,  MOSCATELLI ALESSANDRO ,  RICCARDINI DAMIANO

IPC: H01L21/8238 ,  H01L29/78 ,  H03F20060101