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    MANUFACTURE OF SENSOR PROVIDED WITH ACCELEROMETER AND GYRO, AND SENSOR MANUFACTURED BY THE METHOD
    1.
    发明专利
    MANUFACTURE OF SENSOR PROVIDED WITH ACCELEROMETER AND GYRO, AND SENSOR MANUFACTURED BY THE METHOD 失效

    公开(公告)号：JPH11183518A

    公开(公告)日：1999-07-09

    申请号：JP21582598

    申请日：1998-07-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

    Abstract: PROBLEM TO BE SOLVED: To enhance the sensitivity of a sensor furthermore by providing a weighted region containing tungsten in a movable mass. SOLUTION: A sacrifice region whose both sides and lower side are surrounded by a buried conductive region 3 is etched and removed, and an air gap 38 is formed in a semiconductor substrate 1. In its bottom part, a movable mass 40 is separated from the other parts of the substrate 1, and supported only by a fixed zone 42. This movable mass 40 is H-shaped, and a cross wall partitioning a movable electrode is inserted like a comb into the cross wall of a stationary mass 41 partitioning a stationary electrode. Since the movable and stationary electrodes are polarized through a contact region and buried conductive regions, the change of the distance between the movable electrode and the stationary electrode to be produced when the movable mass 40 is accelerated, is detected as a capacity change. Since tungsten is deposited on the movable mass 40 in a manufacturing stage to a thickness of about 1 μm for example, to form a tungsten weighted region 26C, the sensitivity of detection of the sensor increases furthermore.

    INTEGRATED DEVICE INCLUDING ELECTROMECHANICAL MICROMINIATURE STRUCTURE BODY ACCOMPANIED WITH NO RESIDUAL STRESS AND MANUFACTURE THEREOF
    2.
    发明专利
    INTEGRATED DEVICE INCLUDING ELECTROMECHANICAL MICROMINIATURE STRUCTURE BODY ACCOMPANIED WITH NO RESIDUAL STRESS AND MANUFACTURE THEREOF 失效

    公开(公告)号：JP2000233400A

    公开(公告)日：2000-08-29

    申请号：JP2000031704

    申请日：2000-02-09

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  LORA CASTOLDI ,  MARCO FERUREA

    IPC: B81B3/00 ,  G01P15/08

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an microminiature integrated structural body capable of removing or reducing residual stress considerably. SOLUTION: A sacrifice region 21 is formed on a substrate 20 of a semiconductor material, an epitaxial layer 25 grows, then a stress release groove 31 is formed by surrounding a region 33 of the epitaxial layer 25 in which an electromechanical microminiature integrated structural body is formed, and then a wafer 28 is heat-treated to release residual stress. In succession, a seal region of a dielectric material is filled in the stress release groove 31 to form an integrated microminiature constituting element. Finally, a groove defining the ultra-micro structural body is formed on an inner side of a region surrounded by the seal region, then the sacrifice region is removed, and the microminiature integrated structual body without residual stress is formed.

    INTEGRATED ANGULAR VELOCITY SENSOR DEVICE AND ITS MANUFACTURE
    3.
    发明专利
    INTEGRATED ANGULAR VELOCITY SENSOR DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH11325916A

    公开(公告)日：1999-11-26

    申请号：JP30241798

    申请日：1998-10-23

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  FORONI MARIO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: G01C19/56 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

    Abstract: PROBLEM TO BE SOLVED: To realize a vibration type integrated angular velocity sensor having high level performance and reliability at a low cost and its manufacturing method. SOLUTION: This angular velocity sensor device comprises a pair of mobile masses 2a, 2b which are formed in the epitaxial layer and are anchored to one another and to remainder of the device by anchorage elements. The mobile masses 2a, 2b are symmetrical with one another, and have mobile excitation electrodes 6a which are intercalated with respective fixed excitation electrodes 7a1 , 7a2 and mobile detection electrodes 6b which are intercalated with fixed detection electrodes 7b1 , 7b2 . The mobile and fixed excitation electrodes extend in a first direction, and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

    MANUFACTURE OF SOI WAFER
    4.
    发明专利
    MANUFACTURE OF SOI WAFER 失效

    公开(公告)号：JP2000058802A

    公开(公告)日：2000-02-25

    申请号：JP674099

    申请日：1999-01-13

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MONTANINI PIETRO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

    IPC: H01L21/76 ,  H01L21/3065 ,  H01L21/762 ,  H01L27/12

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer that can be supplied at low cost. SOLUTION: This manufacturing method of an SOI wafer consists of a process to form a reversed U-shape protection regions 30 made of oxidation resistant material covering first wafer portions 18 on a single crystal semiconductor wafer 1, a process to form deep trenches 16 that extend between the above first wafer portions 18 and demarcate side portions of the first wafer portions 18, a process to completely oxidize the first wafer portions 18 excluding the upper portions 21 covered by the protection regions, a process to form at least one continuous region 22 of a covered oxide that is overlaid with the above unoxidized upper portions 21, and a process to epitaxially grow a crystal semiconductor material layer from the above unoxidized upper portions 21.

    PROCESS FOR THE SINGULATION OF INTEGRATED DEVICES IN THIN SEMICONDUCTOR CHIPS
    7.
    发明申请
    PROCESS FOR THE SINGULATION OF INTEGRATED DEVICES IN THIN SEMICONDUCTOR CHIPS 审中-公开
    在半导体芯片中集成器件的整合过程

    公开(公告)号：WO2005104223A8

    公开(公告)日：2006-11-23

    申请号：PCT/EP2005051694

    申请日：2005-04-18

    Applicant: ST MICROELECTRONICS SRL ,  PONZA ANNA ,  DEPETRO RICCARDO ,  MONTANINI PIETRO

    Inventor： PONZA ANNA ,  DEPETRO RICCARDO ,  MONTANINI PIETRO

    IPC: H01L21/78

    CPC classification number: H01L21/78

    Abstract: A process for the fabrication of an integrated device in a semiconductor chip envisages: forming a semiconductor layer (5') partially suspended above a semiconductor substrate (2) and constrained to the substrate (2) by temporary anchorages (10, 15'); dividing the layer (5') into a plurality of portions (13) laterally separated from one another; and removing the temporary anchorages (10, 15'; 38), in order to free the portions (13).

    Abstract translation: 用于制造半导体芯片中的集成器件的方法设想：形成半导体衬底（2）部分悬置并通过临时固定（10,15'）约束到衬底（2）的半导体层（5'）; 将层（5'）分成彼此横向分离的多个部分（13）; 以及移除所述临时锚固件（10,15'; 38），以便释放所述部分（13）。

    9.
    发明专利
    未知

    公开(公告)号：DE69734280D1

    公开(公告)日：2006-02-09

    申请号：DE69734280

    申请日：1997-07-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: B81B3/00 ,  G01C19/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84

    Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

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