公开(公告)号：DE69505348D1

公开(公告)日：1998-11-19

申请号：DE69505348

申请日：1995-02-21

Applicant: ST MICROELECTRONICS SRL

Inventor： DE PETRO RICCARDO ,  PALMIERI MICHELE ,  GALBIATI PAOLA ,  CONTIERO CLAUDIO

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A high voltage lateral MOSFET transistor structure constituted by various interdigitated modular elements formed on a layer of monocrystaline silicon is described together with a process for its fabrication. To save area of silicon and to reduce the specific resistivity RDS on enriched drain regions (16) are formed by implanting doping material (N) in the silicon through apertures in the field oxide (11) obtained with a selective anisotropic etching by utilising as a mask the strips of polycrystaline silicon (14) which serve as gate electrodes and field electrodes.

公开(公告)号：DE69505348T2

公开(公告)日：1999-03-11

申请号：DE69505348

申请日：1995-02-21

Applicant: ST MICROELECTRONICS SRL

Inventor： DE PETRO RICCARDO ,  PALMIERI MICHELE ,  GALBIATI PAOLA ,  CONTIERO CLAUDIO

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A high voltage lateral MOSFET transistor structure constituted by various interdigitated modular elements formed on a layer of monocrystaline silicon is described together with a process for its fabrication. To save area of silicon and to reduce the specific resistivity RDS on enriched drain regions (16) are formed by implanting doping material (N) in the silicon through apertures in the field oxide (11) obtained with a selective anisotropic etching by utilising as a mask the strips of polycrystaline silicon (14) which serve as gate electrodes and field electrodes.