公开(公告)号：IT1313850B1

公开(公告)日：2002-09-24

申请号：ITMI992469

申请日：1999-11-25

Applicant: ST MICROELECTRONICS SRL

Inventor： NOVELLI ALDO ,  GARIBOLDI ROBERTO ,  GENOVA ANGELO ,  FILIPPO ROBERTO

IPC: H03K17/0412 ,  H03K17/06

Abstract: A high side circuit is described which comprises at least one power device (1) having a first non drivable terminal (D) connected to a supply voltage (Vcc), at least one load (2) connected between a second non drivable terminal (S) of the power device (1) and ground, and driving circuitry (10). The driving circuitry (10) comprises suitable dimensioned transistors (M1, M2, M3) which are connected to each other and to a higher voltage (Vboot) than the supply voltage (Vcc) in order to control the turning on and the turning off of the power device (1) and to minimize the potential difference between the second non drivable terminal (S) and a drivable terminal (G) of the power device (1) during the turning off state to avoid the re-turning on of the same power device.

公开(公告)号：ITMI992469A1

公开(公告)日：2001-05-25

申请号：ITMI992469

申请日：1999-11-25

Applicant: ST MICROELECTRONICS SRL

Inventor： NOVELLI ALDO ,  GARIBOLDI ROBERTO ,  GENOVA ANGELO ,  FILIPPO ROBERTO

IPC: H03K17/0412 ,  H03K17/06

Abstract: A high side circuit is described which comprises at least one power device (1) having a first non drivable terminal (D) connected to a supply voltage (Vcc), at least one load (2) connected between a second non drivable terminal (S) of the power device (1) and ground, and driving circuitry (10). The driving circuitry (10) comprises suitable dimensioned transistors (M1, M2, M3) which are connected to each other and to a higher voltage (Vboot) than the supply voltage (Vcc) in order to control the turning on and the turning off of the power device (1) and to minimize the potential difference between the second non drivable terminal (S) and a drivable terminal (G) of the power device (1) during the turning off state to avoid the re-turning on of the same power device.

公开(公告)号：ITMI992469D0

公开(公告)日：1999-11-25

申请号：ITMI992469

申请日：1999-11-25

Applicant: ST MICROELECTRONICS SRL

Inventor： NOVELLI ALDO ,  GARIBOLDI ROBERTO ,  GENOVA ANGELO ,  FILIPPO ROBERTO

IPC: H03K17/0412 ,  H03K17/06

Abstract: A high side circuit is described which comprises at least one power device (1) having a first non drivable terminal (D) connected to a supply voltage (Vcc), at least one load (2) connected between a second non drivable terminal (S) of the power device (1) and ground, and driving circuitry (10). The driving circuitry (10) comprises suitable dimensioned transistors (M1, M2, M3) which are connected to each other and to a higher voltage (Vboot) than the supply voltage (Vcc) in order to control the turning on and the turning off of the power device (1) and to minimize the potential difference between the second non drivable terminal (S) and a drivable terminal (G) of the power device (1) during the turning off state to avoid the re-turning on of the same power device.