公开(公告)号：JPH11150096A

公开(公告)日：1999-06-02

申请号：JP19572498

申请日：1998-07-10

Applicant: ST MICROELECTRONICS SRL

Inventor： MONTANINI PIETRO ,  FERRERA MARCO ,  LAURA CASTOLDI ,  IRARIA GERMI

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01L9/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing integrated structures which can completely eliminate sacrificial regions, when a very strongly attacking solution is needed for long time and/or high concentration. SOLUTION: For integrated structures of a semiconductor material, a sacrificial region 6 of silicon oxide is formed on a substrate 1 of the semiconductor material, a pseudo-epitaxial layer 8 is grown, electric circuits 10, 11 are formed, a silicon carbide layer 21 is deposited, it is photolithographycally defined so as to form an etching mask 23 which contains a fine constitution of microstructures 27 to be formed, trenches 25 are formed as far up to the sacrificial region 6 in the pseudo-epitaxial layer 8 by the use of the etching mask 23, so as to form a lateral contour of the microstructures, and the sacrificial region 6 is eliminated through the trenches 25.