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    MANUFACTURE OF SENSOR PROVIDED WITH ACCELEROMETER AND GYRO, AND SENSOR MANUFACTURED BY THE METHOD
    1.
    发明专利
    MANUFACTURE OF SENSOR PROVIDED WITH ACCELEROMETER AND GYRO, AND SENSOR MANUFACTURED BY THE METHOD 失效

    公开(公告)号：JPH11183518A

    公开(公告)日：1999-07-09

    申请号：JP21582598

    申请日：1998-07-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

    Abstract: PROBLEM TO BE SOLVED: To enhance the sensitivity of a sensor furthermore by providing a weighted region containing tungsten in a movable mass. SOLUTION: A sacrifice region whose both sides and lower side are surrounded by a buried conductive region 3 is etched and removed, and an air gap 38 is formed in a semiconductor substrate 1. In its bottom part, a movable mass 40 is separated from the other parts of the substrate 1, and supported only by a fixed zone 42. This movable mass 40 is H-shaped, and a cross wall partitioning a movable electrode is inserted like a comb into the cross wall of a stationary mass 41 partitioning a stationary electrode. Since the movable and stationary electrodes are polarized through a contact region and buried conductive regions, the change of the distance between the movable electrode and the stationary electrode to be produced when the movable mass 40 is accelerated, is detected as a capacity change. Since tungsten is deposited on the movable mass 40 in a manufacturing stage to a thickness of about 1 μm for example, to form a tungsten weighted region 26C, the sensitivity of detection of the sensor increases furthermore.

    INTEGRATED ANGULAR VELOCITY SENSOR DEVICE AND ITS MANUFACTURE
    2.
    发明专利
    INTEGRATED ANGULAR VELOCITY SENSOR DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH11325916A

    公开(公告)日：1999-11-26

    申请号：JP30241798

    申请日：1998-10-23

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  FORONI MARIO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: G01C19/56 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

    Abstract: PROBLEM TO BE SOLVED: To realize a vibration type integrated angular velocity sensor having high level performance and reliability at a low cost and its manufacturing method. SOLUTION: This angular velocity sensor device comprises a pair of mobile masses 2a, 2b which are formed in the epitaxial layer and are anchored to one another and to remainder of the device by anchorage elements. The mobile masses 2a, 2b are symmetrical with one another, and have mobile excitation electrodes 6a which are intercalated with respective fixed excitation electrodes 7a1 , 7a2 and mobile detection electrodes 6b which are intercalated with fixed detection electrodes 7b1 , 7b2 . The mobile and fixed excitation electrodes extend in a first direction, and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

    5.
    发明专利
    未知

    公开(公告)号：DE69726718D1

    公开(公告)日：2004-01-22

    申请号：DE69726718

    申请日：1997-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

    Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).

    7.
    发明专利
    未知

    公开(公告)号：DE69817518D1

    公开(公告)日：2003-10-02

    申请号：DE69817518

    申请日：1998-04-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MONTANINI PIETRO ,  FERRERA MARCO ,  CASTOLDI LAURA ,  GELMI ILARIA

    IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01L9/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L49/00

    Abstract: The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region (6) of silicon oxide on a substrate (1) of semiconductor material; growing a pseudo-epitaxial layer (8); forming an electronic circuit (10-13, 18); depositing a silicon carbide layer (21); defining photolithographycally the silicon carbon layer so as to form an etching mask (23) containing the topography of a microstructure (27) to be formed; with the etching mask (23), forming trenches (25) in the pseudo-epitaxial layer (8) as far as the sacrificial region (6) so as to laterally define the microstructure; and removing the sacrificial region (6) through the trenches (25).

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