公开(公告)号：JPH05259152A

公开(公告)日：1993-10-08

申请号：JP23360592

申请日：1992-09-01

Applicant: ST MICROELECTRONICS SRL

Inventor： CANESTRARI PAOLO ,  LIETTI CARLO ,  RIVERA GIOVANNI

IPC: H01L21/312 ,  G03F7/00 ,  H01L21/66 ,  H01L23/544

Abstract: PURPOSE: To provide a method for manufacturing a metrological structure which is particular useful for analyzing precision of a device for measuring alignment on a processed substrate. CONSTITUTION: After a first layer 2 has been generated on a Si substrate 1 and further a photoresist layer has been generated, masking, developing and etching are performed. Thereafter, lattice-form patterns are formed, and further covering of the photoresist layer, masking, developing and etching are repeated to form a well 9 in an insulating region of the first layer 2. Thereafter, a second layer 10 such as SiO2 , etc., is partially formed, and thereafter a photoresist layer 12 is covered so that a photoresist insulating region can be obtained.

公开(公告)号：ITMI912345D0

公开(公告)日：1991-09-04

申请号：ITMI912345

申请日：1991-09-04

Applicant: ST MICROELECTRONICS SRL ,  SGS THOMSON MICROELECTRONICS

Inventor： CANESTRARI PAOLO ,  LIETTI CARLO ,  RIVERA GIOVANNI

IPC: H01L21/312 ,  G03F7/00 ,  H01L21/66 ,  H01L23/544 ,  H01L

公开(公告)号：IT1251393B

公开(公告)日：1995-05-09

申请号：ITMI912345

申请日：1991-09-04

Applicant: ST MICROELECTRONICS SRL

Inventor： CANESTRARI PAOLO ,  LIETTI CARLO ,  RIVERA GIOVANNI

IPC: H01L21/312 ,  G03F7/00 ,  H01L21/66 ,  H01L23/544 ,  H01L

公开(公告)号：DE69226234D1

公开(公告)日：1998-08-20

申请号：DE69226234

申请日：1992-08-25

Applicant: ST MICROELECTRONICS SRL

Inventor： CANESTRARI PAOLO ,  LIETTI CARLO ,  RIVERA GIOVANNI

IPC: H01L21/312 ,  G03F7/00 ,  H01L21/66 ,  H01L23/544