公开(公告)号：JPH0883493A

公开(公告)日：1996-03-26

申请号：JP23811794

申请日：1994-09-30

Applicant: ST MICROELECTRONICS SRL

Inventor： CALLIGARO CRISTIANO ,  GASTALDI ROBERTO ,  MALCOVATI PIERO ,  TORELLI GUIDO

IPC: G11C17/00 ,  G11C5/14 ,  G11C16/06 ,  H01L21/822 ,  H01L27/04 ,  H02M3/07 ,  H03K19/0175

Abstract: PURPOSE: To obtain a voltage generation in a wide range and high reliability by a method wherein positive and negative voltages are generated by a voltage booster circuit and there are provided two 3-state logic gate circuits and additional 3-state logic gate circuit for operating a phase of a charge pump circuit incorporated in a booster. CONSTITUTION: Switch circuits (FFT1 to 6) comprise a 3-state logic gate circuit, boosters 7, 8 have command terminals ϕ1 , ϕ2 , a VDD terminal and a ground terminal, and when VDD is +5V, +10.5V and -10.5V. A booster 9 biases a substrate of a CMOS element of the booster 8. These are connected in a predetermined manner and gate capacitance C1 of a memory cell serves as a load. If a booster voltage is not acquired for the booster, an output is floated and the other boosters are nonactivated so as to occupy priority in common node control freely. With this structure, both positive and negative voltages for operating the memory cell via a control gate terminal are generated, an electrical load is operated, and selection in a wide IC technology and high reliability are obtained.

公开(公告)号：DE69327164T2

公开(公告)日：2000-05-31

申请号：DE69327164

申请日：1993-09-30

Applicant: ST MICROELECTRONICS SRL

Inventor： CALLIGARO CRISTIANO ,  GASTALDI ROBERTO ,  MALCOVATI PIERO ,  TORELLI GUIDO

IPC: G11C17/00 ,  G11C5/14 ,  G11C16/06 ,  H01L21/822 ,  H01L27/04 ,  H02M3/07 ,  H03K19/0175 ,  G11C5/00

公开(公告)号：DE69327164D1

公开(公告)日：2000-01-05

申请号：DE69327164

申请日：1993-09-30

Applicant: ST MICROELECTRONICS SRL

Inventor： CALLIGARO CRISTIANO ,  GASTALDI ROBERTO ,  MALCOVATI PIERO ,  TORELLI GUIDO

IPC: G11C17/00 ,  G11C5/14 ,  G11C16/06 ,  H01L21/822 ,  H01L27/04 ,  H02M3/07 ,  H03K19/0175 ,  G11C5/00