1.
    发明专利
    未知

    公开(公告)号:IT1316870B1

    公开(公告)日:2003-05-12

    申请号:ITMI20000687

    申请日:2000-03-31

    Abstract: A method and control device is used for testing electronic memory devices. The method comprises loading test data and/or instructions into a control logic circuit portion associated with a matrix array of memory cells and integrated storage circuitry. According to the invention, a test operation control device is used temporarily instead of the control logic, the test operation control device being external of and connected detachably to the memory device. Advantageously, the test operation control device is a matrix cell array external of the memory.

    2.
    发明专利
    未知

    公开(公告)号:ITMI20000687A1

    公开(公告)日:2001-10-01

    申请号:ITMI20000687

    申请日:2000-03-31

    Abstract: A method and control device is used for testing electronic memory devices. The method comprises loading test data and/or instructions into a control logic circuit portion associated with a matrix array of memory cells and integrated storage circuitry. According to the invention, a test operation control device is used temporarily instead of the control logic, the test operation control device being external of and connected detachably to the memory device. Advantageously, the test operation control device is a matrix cell array external of the memory.

    3.
    发明专利
    未知

    公开(公告)号:ITMI20000687D0

    公开(公告)日:2000-03-31

    申请号:ITMI20000687

    申请日:2000-03-31

    Abstract: A method and control device is used for testing electronic memory devices. The method comprises loading test data and/or instructions into a control logic circuit portion associated with a matrix array of memory cells and integrated storage circuitry. According to the invention, a test operation control device is used temporarily instead of the control logic, the test operation control device being external of and connected detachably to the memory device. Advantageously, the test operation control device is a matrix cell array external of the memory.

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