公开(公告)号：JP2003152160A

公开(公告)日：2003-05-23

申请号：JP2002316673

申请日：2002-10-30

Applicant: ST MICROELECTRONICS SRL

Inventor： FRISINA FERRUCCIO ,  PINTO ANTONIO ,  MAGLI ANGELO

IPC: H01L25/07 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495 ,  H01L25/18 ,  H01L29/417

Abstract: PROBLEM TO BE SOLVED: To improve electric connection between an electronic power device and a package and avoid the formation of an uncontrollable chemical composition area. SOLUTION: The electronic power device (1) having an improved structure is manufactured by employing MOS technique so as to have at least one gate finger area (3) and related source areas (4) positioned at both sides of the area (3). The electronic power device is provided with at least first level metallic layers (3', 4') arranged so as to be contacted individually with the gate finger area and the source areas, and a passivation layer (5) for protection which is arranged so as to cover the gate finger area. A wetting metallic layer (7) is advantageous to be built up on the passivation layer and the first level metallic layer (4') for covering the source area. According to this method, an additional wetting metallic layer functions as a second level metallic layer.

公开(公告)号：ITMI20012284A1

公开(公告)日：2003-04-30

申请号：ITMI20012284

申请日：2001-10-30

Applicant: ST MICROELECTRONICS SRL

Inventor： FRISINA FERRUCCIO ,  PINTO ANTONIO ,  MAGRI ANGELO

IPC: H01L25/07 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495 ,  H01L25/18 ,  H01L29/417

Abstract: The invention relates to an electronic power device (1) of improved structure and fabricated with MOS technology to have at least one gate finger region (3) and corresponding source regions (4) on opposite sides of the gate region (3). This device (1) has at least one first-level metal layer (3',4') arranged to independently contact the gate region (3) and source regions, and has a protective passivation layer (5) arranged to cover the gate region (3). Advantageously, a wettable metal layer (7), deposited onto the passivation layer (5) and the first-level metal layer (4'), overlies said source regions (4). In this way, the additional wettable metal layer (7) is made to act as a second-level metal.