PHOTOVOLTAIC CELL WITH WRAP THROUGH CONNECTIONS.

    公开(公告)号:NL1038916C

    公开(公告)日:2013-01-07

    申请号:NL1038916

    申请日:2011-07-01

    Abstract: Known photovoltaic cells with wrap through connections have output terminals of both polarities on its back surface, one of which is coupled to the front surface via the wrap through connections. The invented solar cell is manufactured by creating an emitter layer on the back surface. Electrode material is applied in mutually separate first and second areas on the back surface. The electrode material in the first area contacts the emitter. The second area covers a surrounding of a hole that provides for the connection on the back surface. The electrode material in the second area lies on the emitter and around the second area the emitter is interrupted by a trench. On the front surface a further area of electrode material is applied over the hole. If necessary the electrode material in the second area on the back surface is applied on a supporting surface that is substantially electrically isolated from current flowing laterally through the emitter layer underneath the first area.

    SOLAR CELL AND METHOD FOR MANUFACTURING SUCH A SOLAR CELL

    公开(公告)号:SG178877A1

    公开(公告)日:2012-04-27

    申请号:SG2012013199

    申请日:2010-08-24

    Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.

    SOLAR CELL AND METHOD FOR MANUFACTURING SUCH A SOLAR CELL.

    公开(公告)号:NL2010496C2

    公开(公告)日:2014-09-24

    申请号:NL2010496

    申请日:2013-03-21

    Abstract: A solar cell including a semiconductor substrate, having a front side surface for receiving radiation and back-side surface providing a first junction structure in a first area substrate portion and with a second junction structure in a second area substrate portion. The second area portion borders the first area portion. The first junction structure includes a first conductivity type semiconductor layer covering the first area portion. The second junction structure includes a second conductivity type semiconductor layer covering the second area portion. The second junction structure, second conductivity type semiconductor layer partially overlaps the first junction structure, first conductivity type semiconductor layer, with the overlapping second conductivity type semiconductor layer portion being above a first conductivity type semiconductor layer portion while separated by a first dielectric layer. The first conductivity type semiconductor layer portion under the overlapping second conductivity type semiconductor layer portion directly contacts the semiconductor substrate surface.

    SOLAR CELL AND METHOD FOR MANUFACTURING OF SUCH A SOLAR CELL.

    公开(公告)号:NL2004066C2

    公开(公告)日:2011-07-07

    申请号:NL2004066

    申请日:2010-01-06

    Abstract: A solar cell includes a silicon semiconductor substrate of a first conductivity type. The substrate has a front surface and a rear surface, of which the front surface is arranged for capturing radiation energy. The rear surface includes a plurality of first electric contacts and a plurality of second electric contacts. The first and second electric contacts are arranged in alternation adjacent to each other. Each first electric contact is a heterostructure of a first type as contact for minority charge carriers, and the front surface of the silicon semiconductor substrate includes a highly doped silicon front surface field layer. The conductivity of the front surface field layer is the first conductivity type.

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