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1.发明授权公开(公告)号：US10954121B2
公开(公告)日：2021-03-23
申请号：US16708271
申请日：2019-12-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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公开(公告)号：US12297099B2
公开(公告)日：2025-05-13
申请号：US17744312
申请日：2022-05-13
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico Vercesi , Luca Seghizzi , Laura Oggioni , Lorenzo Corso
Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.
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Patent Agency Ranking
公开(公告)号：US11787685B2
公开(公告)日：2023-10-17
申请号：US17126903
申请日：2020-12-18
Applicant: STMicroelectronics S.r.l.
Inventor： Luca Seghizzi , Nicolo′ Boni , Laura Oggioni , Roberto Carminati , Marta Carminati
CPC classification number: B81B3/0021 , B81C1/0069 , B81C2201/013 , B81C2201/0156
Abstract: For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.
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4.发明授权公开(公告)号：US10227233B2
公开(公告)日：2019-03-12
申请号：US15379091
申请日：2016-12-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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公开(公告)号：US11128958B2
公开(公告)日：2021-09-21
申请号：US16256816
申请日：2019-01-24
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Federico Vercesi , Laura Maria Castoldi , Laura Oggioni , Matteo Perletti
Abstract: A method for manufacturing a semiconductor die, comprising the steps of: providing a MEMS device having a structural body, provided with a cavity, and a membrane structure suspended over the cavity; coupling the structural body to a filtering module via direct bonding or fusion bonding so that a first portion of the filtering module extends over the cavity and a second portion of the filtering module extends seamlessly as a prolongation of the structural body; and etching selective portions of the filtering module in an area corresponding to the first portion, to form filtering openings fluidically coupled to the cavity. The semiconductor die is, for example, a microphone.
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6.发明授权公开(公告)号：US10570009B2
公开(公告)日：2020-02-25
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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7.发明申请公开(公告)号：US20190185318A1
公开(公告)日：2019-06-20
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
CPC classification number: B81C1/00269 , B81B3/0097 , B81B2201/0242 , B81B2201/0264 , B81B2201/042 , B81B2203/0315 , B81C3/001 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , B81C2203/037
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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