-
公开(公告)号:EP4005972A1
公开(公告)日:2022-06-01
申请号:EP21211139.7
申请日:2021-11-29
Inventor: DUQI, Enri , BALDO, Lorenzo , FERRARI, Paolo , VIGNA, Benedetto , VILLA, Flavio Francesco , CASTOLDI, Laura Maria , GELMI, Ilaria
Abstract: A semiconductor device includes: a substrate (2); a transduction microstructure (3) integrated in the substrate (2); a cap (5) joined to the substrate (2) and having a first face (5a) adjacent to the substrate (2) and a second, outer, face (5b); and a channel (15) extending through the cap (5) from the second face (5b) to the first face (5a) and communicating with the transduction microstructure (3). A protective membrane (17) made of porous polycrystalline silicon permeable to aeriform substances is set across the channel (15).
-
公开(公告)号:EP4488224A1
公开(公告)日:2025-01-08
申请号:EP24181025.8
申请日:2024-06-10
Applicant: STMicroelectronics International N.V.
Inventor: ALLEGATO, Giorgio , FERRARI, Paolo , OGGIONI, Laura
IPC: B81B7/02
Abstract: Described herein is a microelectromechanical sensor device (100), comprising: a stack (1) of a first die (2) that integrates a pressure-detection structure (4) and a second die (6) that integrates an inertial detection structure (8), the first die (2) constituting a cap for the inertial detection structure (8) and being bonded to the second die (6) so as to define a hermetic cavity (28, 34). The first die (2) has a first substrate (20), having a front surface (20a) and a rear surface (20b) that is bonded to said second die (6), a buried cavity (22) being buried and entirely contained in the first substrate (20) and being arranged in a position corresponding to the front surface (20a), from which it is separated by a membrane (24). In particular, the aforesaid buried cavity (22) is distinct and separate from the hermetic cavity (28, 34).
-