公开(公告)号：EP2264753A2

公开(公告)日：2010-12-22

申请号：EP10183038.8

申请日：2006-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Montanini, Pietro ,  Ammendola, Giuseppe ,  Depetro, Riccardo ,  Mottura, Marta

IPC: H01L21/74 ,  H01L21/84 ,  H01L29/06

CPC classification number: H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

Abstract: A method is proposed for manufacturing an integrated electronic device (500). The method includes the steps of providing an SOI substrate (505) including a semiconductor substrate (510), an insulating layer (515) on the semiconductor substrate, and a semiconductor starting layer (512) on the insulating layer, the substrate and the starting layer being of a first type of conductivity, performing an epitaxial growing process, the epitaxial growing process being applied to the starting layer to obtain a thicker semiconductor active layer (542) of the first type of conductivity embedding the starting layer on the insulating layer, forming at least one insulating trench (558) extending from an exposed surface of the active layer to the insulating layer, the at least one insulating trench partitioning the active layer into insulated regions (560) and at least one further insulated region (561), and integrating components (580) of the device in the insulated regions, the components being insulated from the substrate by the insulating layer; in the solution according to an embodiment of the invention, the method further includes, before the step of performing an epitaxial growing process, forming at least one contact trench (520) extending from an exposed surface of the starting layer to the substrate in correspondence to each further insulated region, each contact trench clearing a corresponding portion (530b,530s) of the starting layer, of the insulating layer and of the substrate, implanting dopants of a second type of conductivity different from the first type into at least part of the cleared portions, wherein the epitaxial growing is further applied to the cleared portions thereby at least partially filling each contact trench with semiconductor material, the dopants diffusing during the epitaxial growing to form an insulating region (545) of the second type of conductivity enclosing the at least one contact trench of each further insulated region, and integrating further components (580) of the device in each further insulated region, the further components being insulated from the substrate by a junction formed by the corresponding insulating region with the active layer and/or the substrate when reverse-biased.

Abstract translation: 提出了一种用于制造集成电子设备（500）的方法。 该方法包括以下步骤：提供包括半导体衬底（510），在半导体衬底上的绝缘层（515）以及在绝缘层上的半导体起始层（512）的SOI衬底（505），衬底和起始 所述外延生长工艺被施加到所述起始层以获得在所述绝缘层上嵌入所述起始层的第一类型的导电性的更厚的半导体活性层（542） 形成从有源层的暴露表面延伸到绝缘层的至少一个绝缘沟槽（558），所述至少一个绝缘沟槽将有源层分隔成绝缘区域（560）和至少一个另外的绝缘区域（561）， 以及将所述器件的部件（580）集成在所述绝缘区域中，所述部件通过所述绝缘层与所述衬底绝缘; 在根据本发明实施例的解决方案中，所述方法还包括：在执行外延生长工艺的步骤之前，形成至少一个接触沟槽（520），所述接触沟槽从起始层的暴露表面延伸到衬底， 每个另外的绝缘区域，每个接触沟槽清除起始层，绝缘层和衬底的对应部分（530b，530s）;将不同于第一类型的第二类型导电性的掺杂物注入至少部分 其中外延生长被进一步施加到清除部分，从而至少部分地用半导体材料填充每个接触沟槽，掺杂剂在外延生长期间扩散以形成第二类型导电性的绝缘区域（545） 每个另外的绝缘区域的至少一个接触沟槽，并且还将每个进一步的器件的组件（580）集成在一起 所述另外的部件在反向偏置时通过由所述对应的绝缘区域与所述有源层和/或所述衬底形成的结与所述衬底绝缘。

公开(公告)号：EP2264753A3

公开(公告)日：2011-04-20

申请号：EP10183038.8

申请日：2006-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Montanini, Pietro ,  Ammendola, Giuseppe ,  Depetro, Riccardo ,  Mottura, Marta

IPC: H01L21/76 ,  H01L21/84 ,  H01L27/12 ,  H01L21/762

CPC classification number: H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

Abstract: A method is proposed for manufacturing an integrated electronic device (500). The method includes the steps of providing an SOI substrate (505) including a semiconductor substrate (510), an insulating layer (515) on the semiconductor substrate, and a semiconductor starting layer (512) on the insulating layer, the substrate and the starting layer being of a first type of conductivity, performing an epitaxial growing process, the epitaxial growing process being applied to the starting layer to obtain a thicker semiconductor active layer (542) of the first type of conductivity embedding the starting layer on the insulating layer, forming at least one insulating trench (558) extending from an exposed surface of the active layer to the insulating layer, the at least one insulating trench partitioning the active layer into insulated regions (560) and at least one further insulated region (561), and integrating components (580) of the device in the insulated regions, the components being insulated from the substrate by the insulating layer; in the solution according to an embodiment of the invention, the method further includes, before the step of performing an epitaxial growing process, forming at least one contact trench (520) extending from an exposed surface of the starting layer to the substrate in correspondence to each further insulated region, each contact trench clearing a corresponding portion (530b,530s) of the starting layer, of the insulating layer and of the substrate, implanting dopants of a second type of conductivity different from the first type into at least part of the cleared portions, wherein the epitaxial growing is further applied to the cleared portions thereby at least partially filling each contact trench with semiconductor material, the dopants diffusing during the epitaxial growing to form an insulating region (545) of the second type of conductivity enclosing the at least one contact trench of each further insulated region, and integrating further components (580) of the device in each further insulated region, the further components being insulated from the substrate by a junction formed by the corresponding insulating region with the active layer and/or the substrate when reverse-biased.

公开(公告)号：EP2264752A2

公开(公告)日：2010-12-22

申请号：EP10182985.1

申请日：2006-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Montanini, Pietro ,  Ammendola, Giuseppe ,  Depetro, Riccardo ,  Mottura, Marta

IPC: H01L21/74 ,  H01L21/84 ,  H01L29/06

CPC classification number: H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

Abstract: A method is proposed for manufacturing an integrated electronic device (400) of the SOI type. The method includes the steps of providing an SOI substrate (105) including a semiconductor substrate (110), an insulating layer (115) on the semiconductor substrate, and a semiconductor starting layer (112) on the insulating layer, performing an epitaxial growing process, the epitaxial growing process being applied to the starting layer to obtain a thicker semiconductor active layer (142) embedding the starting layer on the insulating layer, forming at least one insulating trench (405) extending from an exposed surface of the active layer to the insulating layer, the at least one insulating trench partitioning the active layer into insulated regions (415) and at least one further insulated region (425), and integrating components (420) of the device in the insulated regions; in the solution according to an embodiment of the invention, the method further includes, before the step of performing an epitaxial growing process, forming at least one contact trench (120) extending from an exposed surface of the starting layer to the substrate in correspondence to each further insulated region, wherein each contact trench clears a corresponding portion (130b,130s) of the starting layer, of the insulating layer and of the substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling each contact trench with semiconductor material gettering impurities of the active layer, the gettered impurities in the at least one further insulated region being segregated from the insulated regions.

Abstract translation: 提出了一种制造SOI型集成电子器件（400）的方法。 该方法包括以下步骤：提供包括半导体衬底（110），半导体衬底上的绝缘层（115）和绝缘层上的半导体起始层（112）的SOI衬底（105），执行外延生长工艺 ，外延生长工艺被施加到起始层，以获得将起始层嵌入绝缘层上的更厚的半导体有源层（142），形成从活性层的暴露表面延伸到至少一个绝缘沟槽（405） 绝缘层，所述至少一个绝缘沟槽将所述有源层分隔成绝缘区域（415）和至少一个另外的绝缘区域（425），以及将所述器件的部件（420）集成在所述绝缘区域中; 在根据本发明的实施例的解决方案中，该方法还包括在进行外延生长工艺的步骤之前，形成从起始层的暴露表面延伸到衬底的至少一个接触沟槽（120），对应于 每个另外的绝缘区域，其中每个接触沟槽清除起始层，绝缘层和衬底的对应部分（130b，130s），外延生长被进一步施加到清除部分，从而至少部分地填充每个接触沟槽 利用吸收有源层的杂质的半导体材料，至少一个另外的绝缘区域中的杂质杂质与绝缘区域分离。

公开(公告)号：EP2264752A3

公开(公告)日：2011-04-20

申请号：EP10182985.1

申请日：2006-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Montanini, Pietro ,  Ammendola, Giuseppe ,  Depetro, Riccardo ,  Mottura, Marta

IPC: H01L21/322 ,  H01L21/84 ,  H01L21/762

CPC classification number: H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

Abstract: A method is proposed for manufacturing an integrated electronic device (400) of the SOI type. The method includes the steps of providing an SOI substrate (105) including a semiconductor substrate (110), an insulating layer (115) on the semiconductor substrate, and a semiconductor starting layer (112) on the insulating layer, performing an epitaxial growing process, the epitaxial growing process being applied to the starting layer to obtain a thicker semiconductor active layer (142) embedding the starting layer on the insulating layer, forming at least one insulating trench (405) extending from an exposed surface of the active layer to the insulating layer, the at least one insulating trench partitioning the active layer into insulated regions (415) and at least one further insulated region (425), and integrating components (420) of the device in the insulated regions; in the solution according to an embodiment of the invention, the method further includes, before the step of performing an epitaxial growing process, forming at least one contact trench (120) extending from an exposed surface of the starting layer to the substrate in correspondence to each further insulated region, wherein each contact trench clears a corresponding portion (130b,130s) of the starting layer, of the insulating layer and of the substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling each contact trench with semiconductor material gettering impurities of the active layer, the gettered impurities in the at least one further insulated region being segregated from the insulated regions.

公开(公告)号：EP1873821A1

公开(公告)日：2008-01-02

申请号：EP06116123.8

申请日：2006-06-27

Applicant: STMicroelectronics S.r.l.

Inventor： Montanini, Pietro ,  Ammendola, Giuseppe ,  Depetro, Riccardo ,  Mottura, Marta

IPC: H01L21/74

CPC classification number: H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

Abstract: A method for manufacturing an integrated electronic device (100;400;500) is proposed. The method comprises the steps of: providing an SOI substrate (105;505) comprising a semiconductor substrate (110;510), an insulating layer (115;515) on the semiconductor substrate, and a semiconductor starting layer (112;512) on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer (142;542) on the insulating layer for integrating components of the device, and forming at least one contact trench (120;520) extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion (130b,130s;530b,530s) of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.

Abstract translation: 提出了一种用于制造集成电子装置（100; 400; 500）的方法。 该方法包括以下步骤：提供包括半导体衬底（110; 510），半导体衬底上的绝缘层（115; 515）和半导体起始层（112; 512）上的SOI衬底（105; 505） 绝缘层; 外延生长所述起始层以在所述绝缘层上获得半导体有源层（142; 542），用于对所述器件的部件进行积分，以及形成从所述起始层的暴露表面延伸到所述至少一个接触沟槽（120; 520） 在外延生长起始层的步骤之前的半导体衬底，其中每个接触沟槽清除起始层，绝缘层和半导体衬底的对应部分（130b，130s; 530b，530s），外延生长被进一步应用 到清除部分，从而至少部分地用半导体材料填充至少一个接触沟槽。