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    Process for manufacturing integrated chemical microreactors of semiconductor material, and integrated microreactor
    1.
    发明公开
    Process for manufacturing integrated chemical microreactors of semiconductor material, and integrated microreactor 有权
    一种用于半导体材料的制造集成微反应器的化学和集成微反应器过程

    公开(公告)号：EP1161985A1

    公开(公告)日：2001-12-12

    申请号：EP00830400.8

    申请日：2000-06-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Villa, Flavio ,  Mastromatteo, Ubaldo ,  Barlocchi, Gabriele ,  Cattaneo, Mauro

    IPC: B01J19/00

    CPC classification number: B81C1/00119 ,  B01J19/0093 ,  B01L3/5027 ,  B01L3/502707 ,  B01L7/52 ,  B01L7/525 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/1827 ,  B01L2300/185 ,  B01L2300/1883 ,  B81B2201/0214 ,  B81B2201/051 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/053

    Abstract: The microreactor is completely integrated and is formed by a semiconductor body (2) having a surface (4) and housing at least one buried channel (3) accessible from the surface of the semiconductor body (2) through two trenches (21a, 21b). A heating element (10) extends above the surface (4) over the channel (3) and a resist region (18) extends above the heating element and defines an inlet reservoir and an outlet reservoir (19, 20). The reservoirs (19, 20) are connected to the trenches (21a, 21b) and have, in cross-section, a larger area than the trenches. The outlet reservoir (20) has a larger area than the inlet reservoir (19). A sensing electrode (12) extends above the surface (4) and inside the outlet reservoir (20).

    Abstract translation: 微反应器是完全呼叫集成并且由一个半导体主体（2）形成具有表面（4）和壳体的至少一个掩埋沟道（3）从所述半导体主体（2）的表面通过两个沟槽访问（21A，21B） ， 的加热元件（10）的表面（4）在所述通道（3）和抗蚀剂区域（18）上方延伸，加热元件的上方延伸，并且限定到入口储槽和出口储槽（19，20）。 储存器（19，20）连接到所述沟槽（21A，21B），并且具有，在横截面中，比沟槽更大的面积。 出口储槽（20）具有比所述入口储（19）大的面积。 的感测电极（12）的表面（4）的上方和出口储槽（20）的内部延伸。

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