MOS transistors circuit having a transformer/data interface function
    4.
    发明授权
    MOS transistors circuit having a transformer/data interface function 失效
    MOS晶体管电路与变压器/数据接口功能

    公开(公告)号:EP0903927B1

    公开(公告)日:2004-06-09

    申请号:EP97830462.4

    申请日:1997-09-23

    Abstract: The invention relates to a MOS transistors substitutive circuit having a transformer/data interface function, in particular for ISDN networks, comprising first (11a) and second (11b) power supply/transmitter blocks, the first power supply/transmitter block (11a) being connected between a voltage reference (V) and a first data interface (RX), and the second power supply/transmitter block (11b) being connected between a ground potential reference (GND) and a second data interface (TX), both power supply/transmitter blocks being connected to a supply voltage reference (VDD). The MOS transistors substitutive circuit according to the invention comprises first (12) and second (12') MOS transistor pairs connected to the voltage reference (V), the MOS transistors being diode configured and held in their saturation range, so as to have a high A.C. impedance and virtually zero D.C. impedance, thereby minimizing power dissipation through the substitutive circuit. The invention also concerns a control and driving switch configuration for a network termination of at least first (11) and second (11') MOS transistors substitutive circuits according to the invention, operating respectively in a first condition ("normal condition") of operation of the network termination characterized by the presence of the polarity reverse control signal (Scrp), and a second condition ("RM emergency condition") of operation of the network termination characterized by the absence of the polarity reverse control signal (Scrp). The control configuration selects the voltage reference being applied to the power supply/transmitter blocks.

    MOS transistors circuit having a transformer/data interface function
    5.
    发明公开
    MOS transistors circuit having a transformer/data interface function 失效
    变换器/数据转换器(MOS-Transistorenschaltung mit Transformator / Datenschnittstellenfunktion)

    公开(公告)号:EP0903927A1

    公开(公告)日:1999-03-24

    申请号:EP97830462.4

    申请日:1997-09-23

    Abstract: The invention relates to a MOS transistors substitutive circuit having a transformer/data interface function, in particular for ISDN networks, comprising first (11a) and second (11b) power supply/transmitter blocks, the first power supply/transmitter block (11a) being connected between a voltage reference (V) and a first data interface (RX), and the second power supply/transmitter block (11b) being connected between a ground potential reference (GND) and a second data interface (TX), both power supply/transmitter blocks being connected to a supply voltage reference (VDD). The MOS transistors substitutive circuit according to the invention comprises first (12) and second (12') MOS transistor pairs connected to the voltage reference (V), the MOS transistors being diode configured and held in their saturation range, so as to have a high A.C. impedance and virtually zero D.C. impedance, thereby minimizing power dissipation through the substitutive circuit.
    The invention also concerns a control and driving switch configuration for a network termination of at least first (11) and second (11') MOS transistors substitutive circuits according to the invention, operating respectively in a first condition ("normal condition") of operation of the network termination characterized by the presence of the polarity reverse control signal (Scrp), and a second condition ("RM emergency condition") of operation of the network termination characterized by the absence of the polarity reverse control signal (Scrp). The control configuration selects the voltage reference being applied to the power supply/transmitter blocks.

    Abstract translation: 本发明涉及一种具有变压器/数据接口功能的MOS晶体管替代电路,特别是对于ISDN网络,包括第一(11a)和第二(11b)电源/发射器模块,第一电源/发射器模块(11a) 连接在电压基准(V)和第一数据接口(RX)之间,并且第二电源/发射器模块(11b)连接在接地电位基准(GND)和第二数据接口(TX)之间,两个电源 /发射机模块连接到电源电压基准(VDD)。 根据本发明的MOS晶体管替代电路包括连接到电压基准(V)的第一(12)和第二(12')MOS晶体管对,所述MOS晶体管被二极管配置并保持在其饱和范围内,以具有 高交流阻抗和几乎零直流阻抗,从而使通过替代电路的功率消耗最小化。 本发明还涉及根据本发明的至少第一(11)和第二(11')MOS晶体管替代电路的网络终端的控制和驱动开关配置,分别在操作的第一条件(“正常状态”)中操作 的网络终端的特征在于极性反转控制信号(Scrp)的存在,以及以不存在极性反向控制信号(Scrp)为特征的网络终端的操作的第二条件(“RM紧急状况”)。 控制配置选择施加到电源/发射器模块的电压基准。

    Circuit for ringing signal generation for subscriber circuits
    7.
    发明公开
    Circuit for ringing signal generation for subscriber circuits 有权
    Schaltungsanordnung zur RufwechselspannungserzeugungfürTeilnehmerschaltungen

    公开(公告)号:EP1017220A2

    公开(公告)日:2000-07-05

    申请号:EP99126234.6

    申请日:1999-12-30

    CPC classification number: H04M19/02

    Abstract: A subscriber's telephone system is presented that includes at least one driver circuit connected to Tip and Ring terminals. An additional network is connected between an output of the driver circuit and the Ring terminal. This additional network includes a suitably dimensioned capacitor and a diode limiter connected in parallel with each other to minimize the overall voltage while maintaining a desired battery mean value.

    Abstract translation: 提出了一种用户电话系统,其包括连接到尖端和环形终端的至少一个驱动器电路。 在驱动电路的输出和环形端子之间连接一个附加网络。 该附加网络包括适当尺寸的电容器和二极管限制器,彼此并联连接以最小化总体电压,同时保持期望的电池平均值。

Patent Agency Ranking