公开(公告)号：EP4333073A1

公开(公告)日：2024-03-06

申请号：EP23182331.1

申请日：2023-06-29

Applicant: STMicroelectronics S.r.l.

Inventor： FIORENZA, Patrick ,  ROCCAFORTE, Fabrizio ,  ZANETTI, Edoardo ,  SAGGIO, Mario Giuseppe

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/872 ,  H01L21/336 ,  H01L29/12

Abstract: Electronic device (20; 60) comprising: a semiconductor body (48; 68), in particular of Silicon Carbide, SiC, having a first (48a; 68a) and a second face (48b; 68b), opposite to each other along a first direction (Z); and an electrical terminal (G; 82, 74) at the first face (48b; 68b), insulated from the semiconductor body (48; 68) by an electrical insulation region (52; 80). The electrical insulation region is a multilayer comprising: a first insulating layer (102), of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer (104) on the first insulating layer (102), of a Hafnium Oxide; and a third insulating layer (106) on the second insulating layer (104), of an Aluminum Oxide.

公开(公告)号：EP4020595A1

公开(公告)日：2022-06-29

申请号：EP21217608.5

申请日：2021-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： FIORENZA, Patrick ,  ROCCAFORTE, Fabrizio ,  ZANETTI, Edoardo ,  SAGGIO, Mario Giuseppe

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/12 ,  H01L29/08

Abstract: A MOSFET transistor device has: a functional layer (24) of silicon carbide, having a first conductivity type; gate structures (30) formed on a top surface (24a) of the functional layer and each comprising a dielectric region (31) and an electrode region (32); body wells (26) having a second conductivity type, formed within the functional layer, separated from one another by surface-separation regions (29); source regions (27) having the first conductivity type, formed within the body wells, laterally and partially underneath respective gate structures. Modified-doping regions (40) are arranged in the surface-separation regions centrally thereto, underneath respective gate structures, in particular underneath the corresponding dielectric regions, and have a modified concentration of dopant as compared to the concentration of the functional layer.

公开(公告)号：EP3742496A1

公开(公告)日：2020-11-25

申请号：EP20176149.1

申请日：2020-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： FIORENZA, Patrick ,  ROCCAFORTE, Fabrizio ,  SAGGIO, Mario Giuseppe

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/872 ,  H01L21/336 ,  H01L29/12

Abstract: An electronic device comprising: a semiconductor body (48; 68) of silicon carbide, SiC, having a first (48a; 68a) and a second face (48b; 68b), opposite to one another along a first direction (Z), which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal (S; 74), which extends at the first face of the semiconductor body; a second conduction terminal (D; 72), which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer (52; 80), of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.