公开(公告)号：EP4220735A1

公开(公告)日：2023-08-02

申请号：EP23153642.6

申请日：2023-01-27

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  GIANNAZZO, Filippo ,  GRECO, Giuseppe ,  ROCCAFORTE, Fabrizio

IPC: H01L29/778 ,  H01L21/337 ,  H01L21/265 ,  H01L29/10 ,  H01L29/267 ,  H01L29/423 ,  H01L29/08 ,  H01L29/20

Abstract: High-electron-mobility transistor, HEMT, device (20) in enhancement-mode, comprising: a semiconductor body (35) having a top surface (27b) and including a heterostructure (25, 27) configured to generate a two-dimensional electron gas, 2DEG, (31); and
- a gate structure (32) which extends on the top surface (27b) of the semiconductor body (35), is biasable to electrically control the 2DEG (31) and comprises a functional layer (34) and a gate contact (33) in direct physical and electrical contact with each other. The gate contact (33) is of conductive material and the functional layer (34) is of two-dimensional semiconductor material and comprises a first doped portion (40') with P-type electrical conductivity, which extends on the top surface (27b) of the semiconductor body (35) and is interposed between the semiconductor body (35) and the gate contact (33) along a first axis (Z).

公开(公告)号：EP4152406A1

公开(公告)日：2023-03-22

申请号：EP22193143.9

申请日：2022-08-31

Applicant: STMicroelectronics S.r.l.

Inventor： GIANNAZZO, Filippo ,  GRECO, Giuseppe ,  ROCCAFORTE, Fabrizio ,  RASCUNÀ, Simone

IPC: H01L29/06 ,  H01L29/267 ,  H01L29/66 ,  H01L29/872

Abstract: Merged-PiN-Schottky, MPS, device (50) comprising: a solid body (52, 53) having a first electrical conductivity (N); an implanted region (59) extending into the solid body (52, 53) facing a front side (52a) of the solid body (52, 53), having a second electrical conductivity (P) opposite to the first electrical conductivity (N); and a semiconductor layer (61) extending on the front side (52a), of a material which is a transition metal dichalcogenide, TMD. A first region (61') of the semiconductor layer (61) has the second electrical conductivity (P) and extends in electrical contact with the implanted region (59), and a second region (61") of the semiconductor layer (61) has the first electrical conductivity (N) and extends adjacent to the first region (61') and in electrical contact with a respective surface portion of the front side (52a) having the first electrical conductivity (N).