Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
    2.
    发明公开
    Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code 有权
    带有嵌入式纠错码和存储器嵌入纠错代码的存储器的读出方法

    公开(公告)号:EP1830269A1

    公开(公告)日:2007-09-05

    申请号:EP06425141.6

    申请日:2006-03-02

    CPC classification number: G06F11/1076 G06F11/1068 G06F11/141 G11B20/18

    Abstract: A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A 0 , A 1 , ..., A LS-1 ) to generate a first recovered string (S 1 ), and performing a first decoding attempt using the first recovered string (S 1 ). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S 2 -S N ) is generated. On the basis of a comparison between the first recovered string (S 1 ) and the second recovered string (S 2 -S N ), a modified string (S M ) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (S M ).

    Abstract translation: 用于与错误校正编码的存储器装置的读出方法设想如下步骤:执行的存储器位置处的多个第一读取(A 0,A 1,...,A LS-1),以产生一个第一回收串 (S 1),并执行使用第一回收串(S 1)的第一解码尝试。 当第一解码尝试失败,存储器位置被读取的至少一个第二时间,并且至少一个第二回收串(S 2 -S N)被产生。 在第一回收串(S 1)和所述第二回收串(S 2 -S N)之间的比较的基础上,产生一个修改后的字符串(SM),其中擦除(X)的位置,和至少一个第二 解码尝试是使用修改后的字符串(SM)。

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