公开(公告)号：EP1073125A3

公开(公告)日：2003-10-08

申请号：EP00104800.8

申请日：2000-03-06

Applicant: STMicroelectronics S.r.l.

Inventor： Bordogna, Matteo ,  Laurin, Enrico ,  Bernardi, Oreste

IPC: H01L31/0216

CPC classification number: H01L31/02165 ,  G01J2003/516

Abstract: The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first integrated region of a corresponding photosensor; forming at least a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a trasparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.

公开(公告)号：EP1073125A2

公开(公告)日：2001-01-31

申请号：EP00104800.8

申请日：2000-03-06

Applicant: STMicroelectronics S.r.l.

Inventor： Bordogna, Matteo ,  Laurin, Enrico ,  Bernardi, Oreste

IPC: H01L31/0216

CPC classification number: H01L31/02165 ,  G01J2003/516

Abstract: The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first integrated region of a corresponding photosensor; forming at least a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a trasparent metallic oxide having a high refraction index and a corresponding high dielectric constant.
In this manner, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.

Abstract translation: 本发明涉及一种用于制造标准CMOS工艺中的光传感器装置的方法，至少包括以下阶段：在半导体衬底上注入有源区域以获得相应的光电传感器的至少第一集成区域; 在光传感器上形成具有不同厚度和折射率层的至少一叠层，以为相同的光传感器提供干涉滤光器。 上述层中的至少一层由具有高折射率和相应的高介电常数的透明金属氧化物形成。 以这种方式，使干涉谐振器的设计变得更加灵活，使得可能使用包括多于一个高折射率层的层叠层。

公开(公告)号：EP0545082B1

公开(公告)日：2000-09-27

申请号：EP92118785.2

申请日：1992-11-02

Applicant: STMicroelectronics S.r.l.

Inventor： Cereda, Manlio Sergio ,  Ginami, Giancarlo ,  Laurin, Enrico ,  Ravaglia, Andrea

IPC: H01L21/76 ,  H01L21/82

CPC classification number: H01L27/11526 ,  H01L21/76216 ,  H01L21/76218 ,  H01L21/823878 ,  H01L27/11546