Micro-electromechanical structure with self-compensation of the termal drifts caused by thermomechanical stress
    1.
    发明公开
    Micro-electromechanical structure with self-compensation of the termal drifts caused by thermomechanical stress 有权
    微机电引起的热漂移的热机械应力的自补偿结构

    公开(公告)号:EP1640726A1

    公开(公告)日:2006-03-29

    申请号:EP04425705.3

    申请日:2004-09-22

    CPC classification number: G01P15/125 G01P2015/082

    Abstract: In a micro-electromechanical structure (1; 30; 60; 70) of semiconductor material, a detection structure (19; 31) is formed by a stator (5; 35; 61) and by a rotor (4; 34), which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure (24; 46) of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure (19; 31) thereby the micro-electromechanical structure (1; 30; 60; 70) supplies an output signal (ΔC, V OUT ) correlated to the external stress and compensated in temperature.

    Abstract translation: 在一个微机电结构(1; 30; 60; 70)的半导体材料,一检测结构(19; 31)和由一个转子(4; 34),其由定子(; 35 61 5)来形成 是可移动的相对于彼此在外部应力的存在,并有可能对热应力; 补偿结构(24; 46)的微机电型,受到热应力和不变相对于外部应力的,被连接到所述检测结构(19; 31),从而所述微机电结构(1; 30; 60; 70)提供给关联于外部压力和温度的补偿的输出信号(“C,V OUT)。

    Planar inertial sensor, in particular for portable devices having a stand-by function
    2.
    发明公开
    Planar inertial sensor, in particular for portable devices having a stand-by function 有权
    Planarer惯性传感器,无线电无线电

    公开(公告)号:EP1519197A1

    公开(公告)日:2005-03-30

    申请号:EP03425623.0

    申请日:2003-09-26

    CPC classification number: G01P15/0891 G01P15/125 G01P2015/0857 H04M2250/12

    Abstract: A planar inertial sensor (1), comprising a first region and a second region (3, 2) of semiconductor material, the second region (2) being capacitively coupled and being mobile with respect to the first region (3), which is fixed. The second region (2) extends in a plane and has second portions (4), which face respective first portions (11) of the first region (3) and are mobile with respect to these so as to modify the distance between them the second region (2) translate with respect to the first region (3) in any direction belonging to the plane of the second region (2).

    Abstract translation: 一种平面惯性传感器(1),包括半导体材料的第一区域和第二区域(3,2),所述第二区域(2)电容耦合并且相对于所述第一区域(3)是可移动的,所述第一区域固定 。 第二区域(2)在平面中延伸并且具有面对第一区域(3)的相应的第一部分(11)的第二部分(4)并且可相对于它们移动,以便改变它们之间的距离第二区域 区域(2)在属于第二区域(2)的平面的任何方向上相对于第一区域(3)平移。

    Micro-electromechanical structure, in particular accelerometer, with improved insensitivity to thermomechanical stresses
    3.
    发明公开
    Micro-electromechanical structure, in particular accelerometer, with improved insensitivity to thermomechanical stresses 有权
    一种微机电结构,特别是加速度传感器,具有改进的不敏感性热和机械应力

    公开(公告)号:EP1626283A1

    公开(公告)日:2006-02-15

    申请号:EP04425630.3

    申请日:2004-08-13

    Abstract: In a micro-electromechanical structure, in particular an accelerometer (1;30;60), a movable mass or rotor (4;34;61) has a centroidal axis (G;G') and includes a suspended structure (8;38;62) which carries mobile electrodes (10;40). A stator (5;35;77) carries fixed electrodes (12;42) facing the mobile electrodes. The suspended structure (4;34;61) is connected to a rotor-anchoring region (16;44) via elastic elements (15;45;65). The stator includes at least one stator element (20;55;67),which carries a plurality of fixed electrodes (12;42) and is fixed to a stator-anchoring region (21;54). One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis (G;G') which is an axis perpendicular to the plane of the structure, through its centre of gravity, and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis (G;G'). Due to the small distance of all anchoring regions to each other, and to the centre of gravity, stresses due to thermal mismatches can be reduced.

    Abstract translation: 在一个微机电结构,特别是加速计(1; 30; 60),可移动质量体或转子(4; 34; 61)具有一个形心轴(G; G“),并包括一个悬挂结构(8; 38 ; 62)承载可移动电极(10; 40)。 定子(5; 35; 77)承载固定电极(12; 42)面对所述可移动电极。 将悬浮的结构(4; 34; 61)被连接到转子 - 锚定区域(16; 44)通过弹性元件(15; 45; 65)。 所述定子包括至少一个定子元件(20; 55; 67),其承载固定电极的多个(12; 42),并固定到定子锚定区域(21; 54)。 一个转子锚定区域和定子锚定区域的沿重心轴线延伸(G; G“),所有这些是在轴垂直于该结构的平面中,通过其重心,和至少另一个所述转子 - 锚定的 区域和定子锚定区域在重心轴线(; G“G)的附近延伸。 由于所有锚定区域的小的距离海誓山盟,和重力作用,应力的中心由于热失配可以被减小。

    Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane
    6.
    发明公开
    Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane 有权
    与至少一个集成陀螺仪的敏感轴在传感器平面由半导体材料制成

    公开(公告)号:EP1365211A1

    公开(公告)日:2003-11-26

    申请号:EP02425320.5

    申请日:2002-05-21

    CPC classification number: G01C19/5747

    Abstract: An integrated gyroscope (1), including an acceleration sensor (23) formed by: a driving assembly (16); a sensitive mass (6) extending in at least one first and second directions (X, Y) and being moved by the driving assembly (16) in the first direction (X); and by a capacitive sensing electrode (20), facing the sensitive mass. The acceleration sensor (23) has an rotation axis (A) parallel to the second direction (Y), and the sensitive mass (6) is sensitive to forces acting in a third direction (Z) perpendicular to the other directions. The capacitive sensing electrode (20) is formed by a conductive material region extending underneath the sensitive mass (6) and spaced therefrom by an air gap.

    Abstract translation: 一种集成陀螺仪(1)包括在由形成加速度传感器(23):一驱动组件(16); 一个敏感质量块(6)延伸的至少一个第一和第二方向(X,Y),并通过在第一方向(X)的驱动组件(16)被移动; 和由面对敏感质量的电容感测电极(20)。 加速度传感器(23)具有上旋转轴线(A)平行于第二方向(Y),和敏感质量块(6)是在第三方向(Z)垂直的其他方向作用的力是敏感的。 电容感测电极(20)由导电材料区域延伸的敏感质量块(6),并在空气间隙从那里间隔开的下面形成。

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    7.
    发明授权
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器,尤其是用于自由落体应用

    公开(公告)号:EP1879034B1

    公开(公告)日:2009-11-18

    申请号:EP06425485.7

    申请日:2006-07-14

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    8.
    发明公开
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器,尤其是用于自由落体应用

    公开(公告)号:EP1879034A9

    公开(公告)日:2008-05-14

    申请号:EP06425485.7

    申请日:2006-07-14

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Micro-electromechanical Inertial Sensor, in Particular for Free-fall Detection Applications
    9.
    发明公开
    Micro-electromechanical Inertial Sensor, in Particular for Free-fall Detection Applications 有权
    米克罗 - 电力机械师惯性传感器,Frefinall-Anwendungen的insbesondere

    公开(公告)号:EP1879034A1

    公开(公告)日:2008-01-16

    申请号:EP06425485.7

    申请日:2006-07-14

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Abstract translation: 这里描述的是具有对沿着检测方向(x,y,z)的加速度(ax,ay,az)的第一,第二和第三分量敏感的检测结构(9,19)的惯性传感器(1) ),并且产生作为所述加速度分量的函数的相应的电量。 检测结构(9,19)在输出端提供作为所述电量的组合获得的合成电量(C),并与作用在惯性传感器(1)上的合成加速度(a)的值相关,由 加速度分量(ax,ay,az)的矢量和。 特别地,检测结构(9,19)是微机电类型的,并且包括由形成有固定部分(8,18)的半导体材料制成的可移动部分(2,12),第一,第二和第三检测 电容器和电连接部分(10,20),并联连接检测电容器; 所得电量(C)是从所述连接并联获得的电容。

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