公开(公告)号：EP3937209A1

公开(公告)日：2022-01-12

申请号：EP21183643.2

申请日：2021-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： PILUSO, Nicolò ,  SEVERINO, Andrea ,  RINALDI, Stefania ,  MAZZEO, Angelo Annibale ,  CAUDO, Leonardo ,  RUSSO, Alfio ,  FRANCO, Giovanni ,  BASSI, Anna

IPC: H01L21/306

Abstract: A process for manufacturing a silicon carbide semiconductor device envisages the steps of: providing a silicon carbide wafer (21), having a substrate (22); and carrying out an epitaxial growth for formation of an epitaxial layer (23), having a top surface (23a), on the substrate (22). Following upon the step of carrying out an epitaxial growth, the process envisages the step of removing a surface portion of the epitaxial layer (23) starting from the top surface (23a) so as to remove surface damages present at the top surface (23a) as a result of propagation of dislocations (24) from the substrate (22) during the previous epitaxial growth and so as to define a resulting top surface (23a') substantially free of defects.