公开(公告)号：EP4231360A1

公开(公告)日：2023-08-23

申请号：EP23156230.7

申请日：2023-02-13

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  SEVERINO, Andrea ,  GRECO, Giuseppe ,  ROCCAFORTE, Fabrizio

IPC: H01L29/778 ,  H01L21/338 ,  H01L29/417 ,  H01L29/20

Abstract: For the manufacturing of a HEMT device (50), from a wafer (2) of silicon carbide having a surface (2A), an epitaxial layer (4) of silicon carbide is formed on the surface (2A) of the wafer (2), a semiconductive heterostructure (5) is formed on the epitaxial layer, and the wafer of silicon carbide is removed.

公开(公告)号：EP4174915A1

公开(公告)日：2023-05-03

申请号：EP22198683.9

申请日：2022-09-29

Applicant: STMicroelectronics S.r.l.

Inventor： GRASSO, Agata ,  PILUSO, Nicolò ,  SEVERINO, Andrea ,  CAFRA, Brunella

IPC: H01L21/306

Abstract: A Chemical Mechanical Polishing, CMP, process applied to a wafer (20) of Silicon Carbide having a thickness of, or lower than, 200µm, comprising the steps of: arranging the wafer (20) on a supporting head (14) of a CMP processing apparatus (10), the wafer (20) having a front side (20a) and a back side (20b) opposite to one another, the front side (20a) housing at least one electronic component and being coupled to the supporting head (14); deliver a polishing slurry on the wafer (20), wherein the polishing slurry has a pH in the range 2-3; pressing the back side (20b) of the wafer (20) against a polishing pad (16) of the CMP apparatus (10) exerting, by the supporting head (14), a pressure on the polishing pad (16) in the range 5-20 kPa; setting a rotation of the polishing pad (16) in the range 30-180 rpm, and setting a rotation of polishing head (14) in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50°C.

公开(公告)号：EP3937209A1

公开(公告)日：2022-01-12

申请号：EP21183643.2

申请日：2021-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： PILUSO, Nicolò ,  SEVERINO, Andrea ,  RINALDI, Stefania ,  MAZZEO, Angelo Annibale ,  CAUDO, Leonardo ,  RUSSO, Alfio ,  FRANCO, Giovanni ,  BASSI, Anna

IPC: H01L21/306

Abstract: A process for manufacturing a silicon carbide semiconductor device envisages the steps of: providing a silicon carbide wafer (21), having a substrate (22); and carrying out an epitaxial growth for formation of an epitaxial layer (23), having a top surface (23a), on the substrate (22). Following upon the step of carrying out an epitaxial growth, the process envisages the step of removing a surface portion of the epitaxial layer (23) starting from the top surface (23a) so as to remove surface damages present at the top surface (23a) as a result of propagation of dislocations (24) from the substrate (22) during the previous epitaxial growth and so as to define a resulting top surface (23a') substantially free of defects.