Plastic film supported single crystal silicon photovoltaic cell structure and method of fabrication
    1.
    发明公开
    Plastic film supported single crystal silicon photovoltaic cell structure and method of fabrication 审中-公开
    通过由单晶硅和制造工艺的塑料薄膜光伏电池支持

    公开(公告)号:EP1659640A1

    公开(公告)日:2006-05-24

    申请号:EP04425867.1

    申请日:2004-11-19

    CPC classification number: H01L31/1804 H01L31/068 Y02E10/547 Y02P70/521

    Abstract: A method of fabricating a wafer-size photovoltaic cell module capable of drastically reducing the overall costs of photovoltaic cells of enhanced efficiency realized on a monocrystalline silicon substrate comprises the steps of:

    defining an integrated cellular structure, of a light converting monolateral or bilateral junction diode in the epitaxially grown detachable layer, including a first deposited metal current collecting terminal of the diode;
    laminating onto the surface the processed epitaxially grown detachable layer a film of an optical grade plastic material resistant to hydrofluoric acid solutions;
    immersing the wafer in a hydrofluoric acid solution causing detachment of the processed epitaxially grown silicon layer laminated with the film of optical grade plastic material;
    polishing the surface of separation of the detached processed epitaxially grown layer and forming a second metal current collecting terminal of the diode by masked deposition of a metal at a relatively low temperature tolerable by the film of optical grade plastic material.

    Abstract translation: 制造能够大幅度地减少的实现上的单晶硅衬底增强效率的光伏电池的总成本的晶片尺寸太阳能电池组件的方法,包括以下步骤:光的集成蜂窝结构的 - 定义,转换单边或双边结二极管 在外延生长层可拆卸的,包括第一熔敷金属集流二极管的端子; 到表面上的处理外延生长可分离层层压的光学级塑料材料,以氢氟酸溶液腐蚀的膜; 浸渍在曹景伟层叠有光学级塑料材料制成的膜经处理的外延生长的硅层的剥离氢氟酸溶液的晶片; 抛光处理分离外延生长层的分离表面以及形成第二金属电流在相对低的温度下的光学级塑料材料制成的膜可容忍收集二极管通过金属的掩蔽沉积的终端。

Patent Agency Ranking