公开(公告)号：EP2383747A1

公开(公告)日：2011-11-02

申请号：EP11164292.2

申请日：2011-04-29

Applicant: STMicroelectronics S.r.l.

Inventor： Castaldo, Enrico ,  Conte, Antonino ,  Lo Giudice, Gianbattista ,  Rinaldi, Stefania

IPC: G11C16/12 ,  G11C16/30

CPC classification number: G11C16/30 ,  G11C16/12

Abstract: An electrically programmable non-volatile memory device (100) is proposed. The memory device includes a plurality of memory cells (110) and a driver circuit (115,120) for driving the memory cells (110); the driver circuit includes programming means (120) for providing a first programming voltage (VDs) to the drains and a second programming voltage (VSm) to the sources of a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period (T 1 ) for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means (605) for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period (T 2 ) being required by the second programming voltage to reach a second target value thereof, the two transient periods starting simultaneously.

Abstract translation: 提出了一种电可编程非易失性存储器件（100）。 存储装置包括用于驱动存储单元（110）的多个存储单元（110）和驱动电路（115,120）。 所述驱动器电路包括用于向所述漏极提供第一编程电压（VDs）的编程装置（120）和用于对所选择的存储器单元进行编程的所选存储器单元的集合的源的第二编程电压（VSm）; 第一编程电压需要用于达到其第一目标值的第一瞬态周期（T 1）。 在根据本发明的实施例的解决方案中，编程装置包括用于在第二编程电压需要的第二瞬变周期（T 2）期间将第二编程电压基本上等于第一编程电压的装置（605） 达到第二个目标值，两个暂时期同时开始。