Abstract:
An electrically programmable non-volatile memory device (100) is proposed. The memory device includes a plurality of memory cells (110) and a driver circuit (115,120) for driving the memory cells (110); the driver circuit includes programming means (120) for providing a first programming voltage (VDs) to the drains and a second programming voltage (VSm) to the sources of a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period (T 1 ) for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means (605) for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period (T 2 ) being required by the second programming voltage to reach a second target value thereof, the two transient periods starting simultaneously.
Abstract:
An electrically-modifiable, non-volatile, semiconductor memory comprising a plurality of user memory locations which can be addressed individually from outside the memory in order to read and to modify user memory location, there is a corresponding pair of physical memory locations ((X1, Y1), (X2, Y2); WORDn) in the memory, which assume, alternatively, the functions of an active memory location and of a non-active memory location, the active memory location containing a previously-written datum and the non-active memory location being available for the writing of a new datum to replace the previously-written datum, so that, upon a request to replace the previous datum with the new datum, the previous datum is kept in the memory until the new datum has been written.
Abstract:
There is disclosed an integrated control circuit (3) for a charge pump (1). The integrated circuit comprises a first device (112,N1,N2,R,12) suitable for regulating the output voltage (Vout) of the charge pump (1) and a second device (113,M10,M11,C11,11) suitable for increasing the output voltage (Vout) from the charge pump with a set ramp. The integrated circuit comprises means (111) suitable for activating said first device and providing it with a first value of a supply signal (Ireg) in a first period of time (A) and suitable for activating said second device and for providing it with a second value (Iramp) of the supply signal that is greater than the first value in a second period of time (C) after the first in such a way that the output voltage of the charge pump ascends a ramp from a first value (Vlow) to a second value (Vhigh) that is greater than the first value, said second value being fixed by the reactivation of the first device.