公开(公告)号：EP0991115A1

公开(公告)日：2000-04-05

申请号：EP98830564.5

申请日：1998-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： Beghin, Lorena ,  Canali, Francesca ,  Cazzaniga, Francesco ,  Riva, Luca ,  Romeo, Carmelo

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A process for etching a dielectric layer, providing for forming over the dielectric layer (1) a layer of polysilicon (4), forming over the layer of polysilicon (4) a photoresist mask layer (5), etching the layer of polysilicon (4) using the photoresist mask layer (5) as an etching mask for selectively removing the layer of polysilicon (4), removing the photoresist mask layer (5) from over the layer of polysilicon (4), etching the dielectric layer (1) using the layer of polysilicon (4) as a mask. Subsequently, the layer of polysilicon (4) is converted into a layer of a transition metal silicide (10), and the layer of transition metal silicide (10) is etched for selectively removing the latter from over the dielectric layer (1).

Abstract translation: 一种用于蚀刻电介质层的方法，用于在介电层（1）上形成多晶硅层（4），在多晶硅层（4）上形成光致抗蚀剂掩模层（5），蚀刻多晶硅层（4） ）使用光致抗蚀剂掩模层（5）作为用于选择性地去除多晶硅层（4）的蚀刻掩模，从多晶硅层（4）上去除光致抗蚀剂掩模层（5），使用 多晶硅层（4）作为掩模。 随后，将多晶硅层（4）转换成过渡金属硅化物（10）的层，并且蚀刻过渡金属硅化物层（10），以从介质层（1）上方选择性地将其去除。