公开(公告)号：EP4220687A1

公开(公告)日：2023-08-02

申请号：EP23152626.0

申请日：2023-01-20

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  GRECO, Giuseppe ,  BADALA', Paolo ,  ROCCAFORTE, Fabrizio ,  SPERA, Monia

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/335 ,  H01L29/778 ,  H01L21/027 ,  H01L29/20 ,  H01L29/417

Abstract: For manufacturing a HEMT device (1), a conductive region (15, 16) is formed on a work body (50) having a semiconductive heterostructure (8). To obtain the conductive region, a first reaction region (66) having carbon is formed on the heterostructure; and a metal stack (70) is formed having a second reaction region (70A) in contact with the first reaction region. The work body is annealed, so that the first reaction region (66) reacts with the second reaction region (70A), thus forming an interface portion (25) of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive heterostructure.