Abstract:
An integrated transformer (105; 205) integrated transformer comprises a primary winding (135) and a secondary winding (140), of metallic material and having a spiral planar arrangement comprising a corresponding plurality of coils (137; 142). A dielectric portion (145) of dielectric material is arranged between the primary winding and the secondary winding. A field plate winding (150) is electrically coupled with the primary winding. The field plate winding comprises at least one field plate coil (152a) having a lateral extension ( xa ) greater than a lateral extension (xb) of a primary outer coil (137a) of the primary winding with the at least one field plate coil superimposed, in plan view, to the primary outer coil of the primary winding. The field plate winding is configured to mutually separate equipotential surfaces of an operating electric field ( E1; E2 ) at a secondary winding facing edge (139) of the primary outer coil of the primary winding.
Abstract:
An electronic device (100, 100', 760) is proposed. The device is integrated in a chip (705) including at least one stacked layer having a front surface (140, 708) and a rear surface (743) opposite the front surface, the device including: an insulating trench (120,120', 718) insulating an active region (125, 747) of the chip, the insulating trench having a section across each plane parallel to the front surface extending along a longitudinal line (207, 207'), and a front-rear contact (430,436, 440) electrically contacting the front surface to the rear surface in the active region, wherein the section of the insulating trench has a non-uniform width along the longitudinal line, and/or the device further includes at least one further insulating trench (170) within the active region.