公开(公告)号：EP4246554A1

公开(公告)日：2023-09-20

申请号：EP23161718.4

申请日：2023-03-14

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  ROCCAFORTE, Fabrizio ,  BELLOCCHI, Gabriele ,  VIVONA, Marilena

IPC: H01L21/20 ,  H01L29/04 ,  H01L29/872 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16

Abstract: Method for manufacturing an electronic device (50; 80), comprising the steps of: forming, at a front side (2a) of a solid body (3, 2) of 4H-SiC having a first electrical conductivity (N), at least one implanted region (9') having a second electrical conductivity (P) opposite to the first electrical conductivity (N); forming, on the front side (2a), a 3C-SiC layer (52); and forming, in the 3C-SiC layer (52), an ohmic contact region (54; 84) which extends through the entire thickness of the 3C-SiC layer (52), up to reaching the implanted region (9'). A Silicon layer (56) may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the Silicon layer.