Write driver with improved boosting circuit and interconnect impedance matching
    1.
    发明公开
    Write driver with improved boosting circuit and interconnect impedance matching 有权
    写驱动器具有改进的升压电路和互连阻抗匹配

    公开(公告)号:EP1587066A3

    公开(公告)日:2005-11-02

    申请号:EP05008158.7

    申请日:2005-04-14

    CPC classification number: G11B5/02 G11B5/022 G11B2005/0018 H02M3/07

    Abstract: A write driver (510;1210) driving a write current (IL) through a head connected to the write head (570;1270) by an interconnect (560;1260). The write driver (510;1210) includes a circuit (514.556;1214,1256;1340) matching output resistance to the odd characteristic impedance of the interconnect (560;1260) and a voltage boosting circuit (512;1212). The voltage boosting circuit (512;1212) is connected between a supply voltage (VCC) and a voltage reference (VEE), and includes at least a current generator (440,1140), such as a MOS transistor, connected to the input node (422;1122) of a single capacitor (420;1120).

    Abstract translation: 写入驱动器(510; 1210)通过互连(560; 1260)通过连接到写入头(570; 1270)的头来驱动写入电流(IL)。 写入驱动器(510; 1210)包括匹配互连(560; 1260)和升压电路(512; 1212)的奇特征阻抗的输出电阻的电路(514.556; 1214,1256; 1340)。 升压电路(512; 1212)连接在电源电压(VCC)和电压基准(VEE)之间,并且包括至少一个电流发生器(440,1140),例如MOS晶体管,连接到输入节点 (420; 1120)的电容器(422; 1122)。

    Write driver with improved boosting circuit and interconnect impedance matching
    2.
    发明公开
    Write driver with improved boosting circuit and interconnect impedance matching 有权
    写有电压增加驱动器和与匹配阻抗相结合

    公开(公告)号:EP1587066A2

    公开(公告)日:2005-10-19

    申请号:EP05008158.7

    申请日:2005-04-14

    CPC classification number: G11B5/02 G11B5/022 G11B2005/0018 H02M3/07

    Abstract: A write driver (510;1210) driving a write current (IL) through a head connected to the write head (570;1270) by an interconnect (560;1260). The write driver (510;1210) includes a circuit (514.556;1214,1256;1340) matching output resistance to the odd characteristic impedance of the interconnect (560;1260) and a voltage boosting circuit (512;1212). The voltage boosting circuit (512;1212) is connected between a supply voltage (VCC) and a voltage reference (VEE), and includes at least a current generator (440,1140), such as a MOS transistor, connected to the input node (422;1122) of a single capacitor (420;1120).

    Abstract translation: 通过驱动连接到写头的头的写入电流(IL)(570; 1270); A写入驱动器(1210 510)通过向间连接(560; 1260)。 写入驱动器(510; 1210)包括电路(514556; 1214.1256; 1340)输出电阻匹配到互连的奇数特性阻抗(560; 1260)和一个升压电路(512; 1212)。 升压电路(512; 1212)被连接在电源电压(VCC)和参考电压(VEE)之间,并且至少包括一个电流发生器(440.1140):如一个MOS晶体管,连接到所述输入节点 (422; 1122)的单个电容器的(420; 1120)。

    A low supply voltage analog multiplier
    4.
    发明公开
    A low supply voltage analog multiplier 审中-公开
    模拟乘法器与低电源电压

    公开(公告)号:EP1130768A3

    公开(公告)日:2003-09-17

    申请号:EP01100815.8

    申请日:2001-01-15

    Abstract: The invention relates to a low supply voltage analog multiplier which comprises a pair of differential cells (10,11), each cell comprising a pair of bipolar transistors (2,3;6,7) with coupled emitters. A first transistor (2,6) of each cell (10,11) receives an input signal (Vin+,Vin-) on its base terminal and has its collector terminal coupled to a first voltage reference (Vcc) through a bias member (4,8). Advantageously, the second transistor (3,7) of each cell is a diode configuration, and the cells are interconnected at a common node (A) corresponding to the base terminals of the second transistors (3,7) in each pair. This multiplier can be supplied very low voltages and still exhibit a high rate of operation along with reduced harmonic distortion of the output signal, even with input signals of peak-to-peak amplitude above 600 mV.

    A low supply voltage analog multiplier
    5.
    发明公开
    A low supply voltage analog multiplier 审中-公开
    Versgorungsspannung的Analogmultiplizierer mit niedriger

    公开(公告)号:EP1130768A2

    公开(公告)日:2001-09-05

    申请号:EP01100815.8

    申请日:2001-01-15

    Abstract: The invention relates to a low supply voltage analog multiplier which comprises a pair of differential cells (10,11), each cell comprising a pair of bipolar transistors (2,3;6,7) with coupled emitters. A first transistor (2,6) of each cell (10,11) receives an input signal (Vin+,Vin-) on its base terminal and has its collector terminal coupled to a first voltage reference (Vcc) through a bias member (4,8). Advantageously, the second transistor (3,7) of each cell is a diode configuration, and the cells are interconnected at a common node (A) corresponding to the base terminals of the second transistors (3,7) in each pair.
    This multiplier can be supplied very low voltages and still exhibit a high rate of operation along with reduced harmonic distortion of the output signal, even with input signals of peak-to-peak amplitude above 600 mV.

    Abstract translation: 本发明涉及一种低电源模拟乘法器,其包括一对差分单元(10,11),每个单元包括具有耦合发射器的一对双极晶体管(2,3; 6,7)。 每个单元(10,11)的第一晶体管(2,6)在其基极上接收输入信号(Vin +,Vin-),并且其集电极通过偏置构件(4)耦合到第一参考电压(Vcc) ,8)。 有利地,每个单元的第二晶体管(3,7)是二极管配置,并且单元在对应于每对中的第二晶体管(3,7)的基极端子的公共节点(A)处互连。 这种乘法器可以提供非常低的电压,并且仍然表现出高的运行速率以及输出信号的减少的谐波失真,即使高峰值幅度高于600 mV的输入信号也是如此。

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