公开(公告)号：EP1742257B1

公开(公告)日：2012-09-05

申请号：EP05425483.4

申请日：2005-07-08

Applicant: STMicroelectronics Srl

Inventor： Arena, Giuseppe ,  Donato, Caterina ,  Camalleri, Cateno Marco ,  Magri', Angelo

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/511 ,  H01L29/66734

Abstract: A trench (5) is formed in a semiconductor body (2); the side walls and the bottom of the trench are covered with a first dielectric material layer (9); the trench (5) is filled with a second dielectric material layer (10); the first and the second dielectric material layers (9, 10) are etched via a partial, simultaneous and controlled etching such that the dielectric materials have similar etching rates; a gate-oxide layer (13) having a thickness smaller than the first dielectric material layer (9) is deposited on the walls of the trench (5); a gate region (14) of conductive material is formed within the trench (5); and body regions (7) and source regions (8) are formed within the semiconductor body (2), at the sides of and insulated from the gate region (14). Thereby, the gate region (14) extends only on top of the remaining portions of the first and second dielectric material layers (9, 10).

公开(公告)号：EP2200082A1

公开(公告)日：2010-06-23

申请号：EP09171464.2

申请日：2009-09-28

Applicant: STMicroelectronics Srl

Inventor： Camalleri, Cateno Marco ,  Lorenti, Simona ,  Mangano, Fabrizio

IPC: H01L27/142 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/182 ,  H01L31/022441 ,  H01L31/046 ,  H01L31/0682 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contacted photovoltaic cell composed of an integrated diode structure of polycrystalline silicon (briefly polysilicon) or in any case of silicon in a at least partially crystalline state, processed according to a so called thin film technology, that is not requiring the use of silicon wafer or of multi micron-thick layers of silicon wafer separated from a mother wafer, and a relative process of fabrication, are disclosed.

Abstract translation: 由多晶硅（短暂多晶硅）的集成二极管结构或至少部分结晶状态的硅的任何情况下构成的后接触光伏电池，根据所谓的薄膜技术进行处理，不需要使用硅 公开了与母晶片分离的晶片或多微米厚的硅晶片层，以及相关的制造工艺。