-
1.发明公开Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process 审中-公开Modulare verflochteneRückkontakt-Photovoltaikzellenstruktur auf einem opaken Substrat und Herstellungsverfahren
公开(公告)号：EP2200082A1
公开(公告)日：2010-06-23
申请号：EP09171464.2
申请日：2009-09-28
Applicant: STMicroelectronics Srl
Inventor： Camalleri, Cateno Marco , Lorenti, Simona , Mangano, Fabrizio
IPC: H01L27/142 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/182 , H01L31/022441 , H01L31/046 , H01L31/0682 , Y02E10/546 , Y02E10/547 , Y02P70/521
Abstract: A back contacted photovoltaic cell composed of an integrated diode structure of polycrystalline silicon (briefly polysilicon) or in any case of silicon in a at least partially crystalline state, processed according to a so called thin film technology, that is not requiring the use of silicon wafer or of multi micron-thick layers of silicon wafer separated from a mother wafer, and a relative process of fabrication, are disclosed.
Abstract translation: 由多晶硅（短暂多晶硅）的集成二极管结构或至少部分结晶状态的硅的任何情况下构成的后接触光伏电池，根据所谓的薄膜技术进行处理，不需要使用硅 公开了与母晶片分离的晶片或多微米厚的硅晶片层，以及相关的制造工艺。
-
2.发明授权Manufacturing method of a semiconductor substrate comprising at least a buried cavity 有权一种用于制造具有至少一个掩埋空腔的半导体基板的制造方法
公开(公告)号：EP1427010B1
公开(公告)日：2012-01-11
申请号：EP02425742.0
申请日：2002-11-29
Applicant: STMicroelectronics Srl
IPC: H01L21/764 , H01L21/3063 , H01L21/762 , H01L29/06 , B81B1/00 , B81C1/00 , B81B3/00
CPC classification number: B81C1/00047 , B81B2201/0257 , B81C2201/0115 , B81C2201/0116 , H01L21/302 , H01L21/306 , H01L21/76243 , H01L21/764 , H01L29/0649 , H04R19/005
-
Search Results
2
records
(took 0.02 seconds)
