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1.发明授权Manufacturing method of a semiconductor substrate comprising at least a buried cavity 有权一种用于制造具有至少一个掩埋空腔的半导体基板的制造方法
公开(公告)号：EP1427010B1
公开(公告)日：2012-01-11
申请号：EP02425742.0
申请日：2002-11-29
Applicant: STMicroelectronics Srl
IPC: H01L21/764 , H01L21/3063 , H01L21/762 , H01L29/06 , B81B1/00 , B81C1/00 , B81B3/00
CPC classification number: B81C1/00047 , B81B2201/0257 , B81C2201/0115 , B81C2201/0116 , H01L21/302 , H01L21/306 , H01L21/76243 , H01L21/764 , H01L29/0649 , H04R19/005
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