Patent search ap:("STMicroelectronics Srl") AND inv:"Marchi Page Mauro"

1.

发明授权
Mems-type high-sensitivity inertial sensor and manufacturing process thereof 有权
Title translation: Mems型高灵敏度惯性传感器及其制造工艺

公开(公告)号：EP1624284B1

公开(公告)日：2017-07-19

申请号：EP04425573.5

申请日：2004-07-29

Applicant: STMicroelectronics Srl

Inventor： Sassolini, Simone , del Sarto, Marco , Baldo, Lorenzo , Marchi, Mauro

IPC: G01C19/5755 , G01C19/5769

CPC classification number: G01C19/5755 , G01C19/5769

2.

发明授权
Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof 有权
Title translation: 一种微机电结构与电隔离区，以及它们的制备方法

公开(公告)号：EP1617178B1

公开(公告)日：2017-04-12

申请号：EP04425514.9

申请日：2004-07-12

Applicant: STMicroelectronics Srl

Inventor： Spinola Durante, Guido , Sassolini, Simone , Ferrera, Marco , Marchi, Mauro

IPC: G01C19/5769

CPC classification number: G01C19/5769

3.

发明授权
Process for bonding and electrically connecting microsystems integrated in several distinct substrates 有权
Title translation: 该方法以结合多个不同的衬底的集成微系统和电连接

公开(公告)号：EP1296374B1

公开(公告)日：2012-09-05

申请号：EP01830590.4

申请日：2001-09-14

Applicant: STMicroelectronics Srl , Hewlett-Packard Company

Inventor： Mastromatteo, Ubaldo , Bombonati, Mauro , Morin, Daniela , Mottura, Marta , Marchi, Mauro

IPC: H01L23/48 , B81B7/00 , H01L21/18

CPC classification number: B81C1/00269 , H01L21/185 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L2224/0231 , H01L2224/02313 , H01L2224/0401 , H01L2224/05124 , H01L2224/05181 , H01L2224/05624 , H01L2224/10126 , H01L2224/10135 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13124 , H01L2224/13164 , H01L2224/81136 , H01L2224/81139 , H01L2224/812 , H01L2224/81201 , H01L2224/81385 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01073 , H01L2924/01078 , H01L2924/01322 , H01L2924/14 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2924/013

4.

发明授权
Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby. 有权
Title translation: 在半导体器件中制造用于“深通孔”工艺

公开(公告)号：EP1788624B1

公开(公告)日：2010-06-09

申请号：EP05425807.4

申请日：2005-11-16

Applicant: STMicroelectronics Srl

Inventor： Marchi, Mauro , Ferrera, Marco , Riva, Caterina

IPC: H01L23/48

CPC classification number: B81B7/0006 , B81B2201/0242 , B81B2201/0257 , H01L21/76267 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00

5.

发明授权
Semiconductor device having deep through vias 有权
Title translation: 在半导体器件中制造用于“深通孔”工艺

公开(公告)号：EP2202791B1

公开(公告)日：2016-01-27

申请号：EP10160512.9

申请日：2005-11-16

Applicant: STMicroelectronics Srl

Inventor： Marchi, Mauro , Ferrera, Marco , Riva, Caterina

IPC: H01L23/48 , H01L21/762 , H01L21/768 , B81B7/00

CPC classification number: B81B7/0006 , B81B2201/0242 , B81B2201/0257 , H01L21/76267 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00

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