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    CONTACT PROBE, CONTACT PROBE CONNECTING BODY AND METHODS FOR MANUFACTURING SAME
    1.
    发明申请
    CONTACT PROBE, CONTACT PROBE CONNECTING BODY AND METHODS FOR MANUFACTURING SAME 审中-公开
    接触探头，接触探头连接体及其制造方法

    公开(公告)号：WO2011122068A1

    公开(公告)日：2011-10-06

    申请号：PCT/JP2011050770

    申请日：2011-01-18

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  HIRATA YOSHIHIRO ,  KAWASE KAZUNORI ,  NITTA KOJI ,  INAZAWA SHINJI ,  TOKUDA TAKESHI

    Inventor： HIRATA YOSHIHIRO ,  KAWASE KAZUNORI ,  NITTA KOJI ,  INAZAWA SHINJI ,  TOKUDA TAKESHI

    IPC: G01R1/067 ,  G01R1/073 ,  H01L21/66

    CPC classification number: G01R3/00 ,  H01R13/2407 ,  H01R43/16 ,  H01R2201/20 ,  Y10T29/49204

    Abstract: Disclosed are a contact probe that is stable in use, a method of manufacture for a contact probe connecting body, and a method of manufacture for a contact probe. A contact probe (10a) comprises a contact part (11) which makes contact with an object to be measured, a main body (12) connected to the contact part (11), and a covering part (14) which covers the circumference of a cross section not including the contact part (11) in a direction intersecting with the direction of extension of the main body (12). The volume resistance of the material of the covering part (14) is lower than the volume resistance of the material of the main body (12).

    Abstract translation: 公开了使用稳定的接触探针，接触探针连接体的制造方法以及接触探针的制造方法。 接触探针（10a）包括与待测物体接触的接触部分（11），连接到接触部分（11）的主体（12）和覆盖部分（14），覆盖部分 在与主体（12）的延伸方向相交的方向上不包括接触部（11）的横截面。 覆盖部分（14）的材料的体积电阻低于主体（12）的材料的体积电阻。

    2.
    发明专利
    未知

    公开(公告)号：DE112004000610T5

    公开(公告)日：2006-03-09

    申请号：DE112004000610

    申请日：2004-04-12

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： OKADA KAZUNORI ,  HIRATA YOSHIHIRO ,  INAZAWA SHINJI ,  SAKUTA MASAO ,  TANI YOSHIAKI ,  SAKATA TERUHISA

    IPC: C21D9/00 ,  C22F1/00 ,  C22F1/10 ,  C25D1/00 ,  G01R1/067

    Abstract: A metal structure according to the present invention is unlikely to become brittle and has excellent hardness and creep resistance, characterized in that annealing has been applied at a temperature not more than the temperature at which crystals of the metal material start to become larger. This metal structure includes at least two kinds of metal material, and annealing can be applied at a temperature not more than the temperature at which crystals of the metal material start to become larger. For example, the present invention is advantageous in the manner of a microstructure for a contact probe. A fabricating method according to the present invention is a method of fabricating a metal structure unlikely to become brittle and having excellent hardness and creep resistance, characterized in that the step of applying annealing at a temperature not more than the temperature at which crystals of the metal material start to become larger is included.

    6.
    发明专利
    未知

    公开(公告)号：DE60218985T2

    公开(公告)日：2007-12-20

    申请号：DE60218985

    申请日：2002-01-22

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： HIRATA YOSHIHIRO ,  HAGA TSUYOSHI ,  NUMAZAWA TOSHIYUKI ,  NAKAMAE KAZUO ,  OKADA KAZUNORI ,  YORITA JUN

    IPC: G01R1/067 ,  G01R3/00 ,  G01R15/24 ,  H01L21/66

    Abstract: A contact is formed of a tip end portion (11) approximately cylindrical as a whole in shape, having at one end a contact end to come into contact with a circuit under test, and a base portion (12) provided to be opposed to and kept apart from the other end that is opposite to the contact end of the tip end portion. By pressing the tip end portion into contact with a circuit under test (20), the tip end portion and the base portion are brought into contact with each other, and further pushing causes dislocation at the contact surfaces (14,15) so that the tip end portion is moved in a direction parallel to a surface of the circuit under test. Therefore, when the contact probe is pressed into contact with the circuit under test, the contact end of the contact probe is moved such that it scrapes off the surface of the circuit under test to break the insulating film on the surface, resulting in reliable contact with the circuit under test.

    7.
    发明专利
    未知

    公开(公告)号：DE102005041609A1

    公开(公告)日：2006-03-02

    申请号：DE102005041609

    申请日：2005-09-01

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NITTA KOJI ,  INAZAWA SHINJI ,  HIRATA YOSHIHIRO ,  OKADA KAZUNORI

    IPC: B81C1/00 ,  C25D3/50 ,  H01L21/3205

    Abstract: A method of manufacturing electrical parts is provided, which method comprises the steps of: forming a photoresist on a part of the surface of a substrate; forming a metal layer on the surface of the substrate after the photoresist has been formed; removing a part of the metal layer; removing a metal oxide film formed on the: surface of the metal layer as a result of removing a part of the metal layer; and removing the photoresist. With this method the contact resistance on the surfaces of the electrical parts can be decreased.

    8.
    发明专利
    未知

    公开(公告)号：DE112004000632T5

    公开(公告)日：2006-02-23

    申请号：DE112004000632

    申请日：2004-04-13

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： UENO TETSUJI ,  HIRATA YOSHIHIRO ,  OKADA KAZUNORI ,  KAWASE KAZUNORI

    IPC: G01R1/067

    Abstract: According to an embodiment, a probe coming into contact with an electrode pad of a measurement object comprises a connection terminal part integrally formed and connected to a substrate, a contact part having a tapered configuration, and a supporting part which supports the contact part. The contact part extending from an end of the supporting part has a sectional configuration which shares at least one side face with the supporting part.

    Verfahren zum Herstellen von elektrischen Bauteilen
    10.
    发明专利
    Verfahren zum Herstellen von elektrischen Bauteilen 未知

    公开(公告)号：DE102005041609B4

    公开(公告)日：2015-06-25

    申请号：DE102005041609

    申请日：2005-09-01

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NITTA KOJI ,  INAZAWA SHINJI ,  HIRATA YOSHIHIRO ,  OKADA KAZUNORI

    IPC: B81C1/00 ,  C25D3/50 ,  H01L21/3205

    Abstract: Verfahren zum Herstellen von elektrischen Bauteilen, das folgende Schritte umfasst: Ausbilden eines Photoresists (2) auf einem Teil der Oberfläche eines Substrats (1), Ausbilden einer Metallschicht (6) auf der Oberfläche des Substrats (1), nachdem das Photoresist (2) ausgebildet wurde, wobei die Metallschicht (6) aus einem Metall gebildet ist, das Nickel aufweist, Entfernen eines Teils der Metallschicht (6) durch Polieren, Entfernen eines Metalloxidfilms (10), der sich beim Polieren auf der Oberfläche der Metallschicht (6) gebildet hat, Entfernen des Photoresists (2) durch eine Veraschung unter Verwendung eines Gases, das eine Fluorverbindung enthält, und Galvanisieren mit Palladium, mit einer Legierung einschließlich Palladium und Kobalt oder mit Rhodium auf der Oberfläche der Metallschicht (6) nach dem Entfernen des Photoresists (2).

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