公开(公告)号：US12283629B2

公开(公告)日：2025-04-22

申请号：US18303288

申请日：2023-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Jinseong Heo ,  Sangwook Kim ,  Taehwan Moon ,  Sanghyun Jo

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/51 ,  H10B51/30

Abstract: Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

公开(公告)号：US12205951B2

公开(公告)日：2025-01-21

申请号：US17491841

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook Kim ,  Seunggeol Nam ,  Taehwan Moon ,  Kwanghee Lee ,  Jinseong Heo ,  Hagyoul Bae ,  Yunseong Lee

IPC: H01L27/092 ,  H01L29/24 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H10B10/00

Abstract: Provided is a semiconductor device including a first semiconductor transistor including a semiconductor channel layer, and a metal-oxide semiconductor channel layer, and having a structure in which a second semiconductor transistor is stacked on the top of the first semiconductor transistor. A gate stack of the second semiconductor transistor and the top of a gate stack of the first semiconductor transistor may overlap by greater than or equal to 90%. The first semiconductor transistor and the second semiconductor transistor may have a similar level of operation characteristics.

公开(公告)号：US12107140B2

公开(公告)日：2024-10-01

申请号：US18468394

申请日：2023-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taehwan Moon ,  Seunggeol Nam ,  Sanghyun Jo

IPC: H01L29/40 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02 ,  H10B53/30

CPC classification number: H01L29/516 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/40111 ,  H01L29/42392 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/7851 ,  H01L29/78696 ,  H10B53/30

Abstract: A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.

公开(公告)号：US20230307553A1

公开(公告)日：2023-09-28

申请号：US18324638

申请日：2023-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taehwan Moon ,  Hagyoul Bae ,  Seunggeol Nam ,  Sangwook Kim ,  Kwanghee Lee

IPC: H01L29/86 ,  H10K10/50 ,  H10K19/00 ,  H10B69/00

CPC classification number: H01L29/86 ,  H10K10/50 ,  H10K19/00 ,  H10K19/201 ,  H10B69/00

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

公开(公告)号：US20230180481A1

公开(公告)日：2023-06-08

申请号：US18062245

申请日：2022-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hagyoul Bae ,  Seungyeul Yang ,  Minhyun Lee ,  Jinseong Heo ,  Taehwan Moon

IPC: H10B51/20 ,  H10B51/30

CPC classification number: H01L27/11597 ,  H01L27/1159

Abstract: A vertical non-volatile memory device may include a plurality of insulating layers and a plurality of conductive layers alternately stacked on a surface of a substrate in a direction perpendicular to the surface of the substrate; a channel layer on the substrate, where the channel layer extends in the direction perpendicular to the surface of the substrate and the channel layer may be on lateral surfaces of the plurality of insulating layers and lateral surfaces of the plurality of conductive layers; and a ferroelectric layer between the channel layer and the lateral surfaces of the plurality of conductive layers.

公开(公告)号：US12206009B2

公开(公告)日：2025-01-21

申请号：US18513042

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Taehwan Moon ,  Sanghyun Jo

IPC: H01L29/51 ,  H01L21/28 ,  H10B51/00 ,  H10B51/30

Abstract: An electronic device includes a seed layer including a two-dimensional (2D) material, and a ferroelectric layer on the seed layer. The ferroelectric layer is configured to be aligned in a direction in which a (111) crystal direction is perpendicular to a top surface of a substrate on which the seed layer is located and/or a top surface of the seed layer.

公开(公告)号：US11804536B2

公开(公告)日：2023-10-31

申请号：US17244175

申请日：2021-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taehwan Moon ,  Seunggeol Nam ,  Sanghyun Jo

IPC: H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H10B53/30

CPC classification number: H01L29/516 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/40111 ,  H01L29/42392 ,  H01L29/6684 ,  H01L29/7851 ,  H01L29/78391 ,  H01L29/78696 ,  H10B53/30

Abstract: A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.

公开(公告)号：US11646375B2

公开(公告)日：2023-05-09

申请号：US17112355

申请日：2020-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Jinseong Heo ,  Sangwook Kim ,  Taehwan Moon ,  Sanghyun Jo

IPC: H01L29/78 ,  H01L27/1159 ,  H01L29/51 ,  H01L21/02

CPC classification number: H01L29/78391 ,  H01L29/516 ,  H10B51/30 ,  H01L21/02181 ,  H01L21/02189

Abstract: Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

公开(公告)号：US11145731B2

公开(公告)日：2021-10-12

申请号：US16923514

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan Moon ,  Eunha Lee ,  Junghwa Kim ,  Hyangsook Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L21/02 ,  H01L29/423 ,  H01L21/28 ,  H01L27/108 ,  H01L49/02 ,  H01L29/51

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US12087840B2

公开(公告)日：2024-09-10

申请号：US17173604

申请日：2021-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan Moon ,  Keunwook Shin ,  Jinseong Heo

IPC: H01L29/51 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/517 ,  H01L29/0638 ,  H01L29/0847 ,  H01L29/516

Abstract: Disclosed are a semiconductor device and a capacitor which have relatively less leakage current. The semiconductor device includes a semiconductor layer, an oxide layer disposed on the semiconductor layer, and a metal layer disposed on the oxide layer, and a hydrogen concentration in the oxide layer is about 0.7 at % or more.