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公开(公告)号：US20240266445A1
公开(公告)日：2024-08-08
申请号：US18638923
申请日：2024-04-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinseong HEO , Taehwan MOON , Hagyoul BAE , Seunggeol NAM , Sangwook KIM , Kwanghee LEE
CPC classification number: H01L29/86 , H10B69/00 , H10K10/50 , H10K19/00 , H10K19/201
Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号：US12029054B2
公开(公告)日：2024-07-02
申请号：US18303074
申请日：2023-04-19
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji Yamaguchi , Atsushi Toda , Itaru Oshiyama
IPC: H10K39/32 , G02B5/20 , H01L27/146 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/131 , H04N25/75 , H04N25/77 , H04N25/79 , H10K19/00 , H10K19/20
CPC classification number: H10K39/32 , G02B5/201 , G02B5/208 , H01L27/146 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14649 , H01L27/14667 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/201 , H04N25/131 , H04N25/75 , H04N25/77
Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号：US11699765B2
公开(公告)日：2023-07-11
申请号：US17461034
申请日：2021-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinseong Heo , Taehwan Moon , Hagyoul Bae , Seunggeol Nam , Sangwook Kim , Kwanghee Lee
CPC classification number: H01L29/86 , H10B69/00 , H10K10/50 , H10K19/00 , H10K19/201
Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号：US20240244855A1
公开(公告)日：2024-07-18
申请号：US18622284
申请日：2024-03-29
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI , Atsushi TODA , Itaru OSHIYAMA
IPC: H10K39/32 , G02B5/20 , H01L27/146 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/131 , H04N25/75 , H04N25/77 , H04N25/79 , H10K19/00 , H10K19/20
CPC classification number: H10K39/32 , G02B5/201 , G02B5/208 , H01L27/146 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14649 , H01L27/14667 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/201 , H04N25/131 , H04N25/75 , H04N25/77
Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号：US11968836B2
公开(公告)日：2024-04-23
申请号：US17838644
申请日：2022-06-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younghwan Son , Jeehoon Han
IPC: H01L29/417 , H01L29/423 , H10B41/20 , H10B43/20 , H10B43/27 , H10B43/30 , H10B51/20 , H10K19/00
CPC classification number: H10B43/27 , H01L29/41741 , H01L29/42344 , H10B41/20 , H10B43/20 , H10B43/30 , H10B51/20 , H10K19/201
Abstract: Three-dimensional (3D) semiconductor memory devices are provided. A 3D semiconductor memory device includes an electrode structure on a substrate. The electrode structure includes gate electrodes stacked on the substrate. The gate electrodes include electrode pad regions. The 3D semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. The dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.
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Patent Agency Ranking
公开(公告)号：US11785789B2
公开(公告)日：2023-10-10
申请号：US17392996
申请日：2021-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang Lee , Kwang Hee Lee , Sung Young Yun , Dong-Seok Leem , Yong Wan Jin
CPC classification number: H10K39/32 , H10K19/20 , H10K19/201
Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.
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公开(公告)号：US12094892B2
公开(公告)日：2024-09-17
申请号：US18110362
申请日：2023-02-15
Applicant: Monolithic 3D Inc.
Inventor： Zvi Or-Bach , Deepak C. Sekar
IPC: H01L27/146 , H01L25/075 , H01L25/16 , H01L27/15 , H01L33/16 , H01L33/62 , H10K19/00 , H10K39/00 , H10K59/00
CPC classification number: H01L27/14603 , H01L25/0756 , H01L25/167 , H01L27/14605 , H01L27/156 , H01L33/16 , H01L33/62 , H10K19/201 , H10K39/401 , H10K59/751
Abstract: A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the second level includes a plurality of bond pads, where the bonding structure includes oxide to oxide bonding.
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公开(公告)号：US11984514B2
公开(公告)日：2024-05-14
申请号：US18324638
申请日：2023-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinseong Heo , Taehwan Moon , Hagyoul Bae , Seunggeol Nam , Sangwook Kim , Kwanghee Lee
CPC classification number: H01L29/86 , H10B69/00 , H10K10/50 , H10K19/00 , H10K19/201
Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号：US20230376737A1
公开(公告)日：2023-11-23
申请号：US18031290
申请日：2021-10-07
Applicant: Kyushu Institute of Technology
Inventor： Hirofumi Tanaka , Yuki Usami , Azhari Saman
CPC classification number: G06N3/063 , H10K19/201
Abstract: A three-dimensional electric element 10 comprises four or more nonlinear units 11 each having nonlinear current-voltage characteristics and an electric conductor 12 connecting the nonlinear units 11, and the nonlinear units 11 are arranged in a three-dimensional manner. A machine learning system 20 comprises a three-dimensional electric element 10 that includes four or more nonlinear units 11 each having nonlinear current-voltage characteristics and an electric conductor 12 connecting the nonlinear units 11 being arranged in a three-dimensional manner, and an input electrode 13 and an output electrode 14, the input electrode 13 and the output electrode 14 are connected to the three-dimensional electric element 10.
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公开(公告)号：US20240237353A1
公开(公告)日：2024-07-11
申请号：US18613389
申请日：2024-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younghwan Son , Jeehoon Han
IPC: H10B43/27 , H01L29/417 , H01L29/423 , H10B41/20 , H10B43/20 , H10B43/30 , H10B51/20 , H10K19/00
CPC classification number: H10B43/27 , H01L29/41741 , H01L29/42344 , H10B41/20 , H10B43/20 , H10B43/30 , H10B51/20 , H10K19/201
Abstract: Three-dimensional (3D) semiconductor memory devices are provided. A 3D semiconductor memory device includes an electrode structure on a substrate. The electrode structure includes gate electrodes stacked on the substrate. The gate electrodes include electrode pad regions. The 3D semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. The dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.
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