公开(公告)号：EP1278215A2

公开(公告)日：2003-01-22

申请号：EP02254713.7

申请日：2002-07-04

Applicant: Shipley Co. L.L.C.

Inventor： Allen, Craig S. ,  Schemenauer, John ,  Senk, David D. ,  Langlois, Marc ,  Hu, Xiaodong ,  Hwang, Jan Tzyy-Jiuan ,  Ready, Jud ,  Tomav, Trifon

IPC: H01C7/00 ,  H01C17/08

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C7/06 ,  H01C17/08 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0361 ,  Y10T428/261 ,  Y10T428/31678

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract translation: 公开了包含铂和约5和约70摩尔％的铱，钌或其混合物的电阻材料，其基于铂为100％计算。

公开(公告)号：EP1327995A3

公开(公告)日：2005-10-12

申请号：EP03250174.4

申请日：2003-01-10

Applicant: Shipley Co. L.L.C.

Inventor： Schemenaur, John ,  Hariharan, Rajan ,  Langlois, Marc ,  Allen, Craig S.

IPC: H01C17/00

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C17/075 ,  H05K3/382 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0338 ,  H05K2203/0361 ,  H05K2203/0723 ,  Y10T428/12431 ,  Y10T428/12438

Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 µm and a peak-to-peak wavelength of 2 to 20 µm.

公开(公告)号：EP1278215B1

公开(公告)日：2004-10-13

申请号：EP02254713.7

申请日：2002-07-04

Applicant: Shipley Co. L.L.C.

Inventor： Allen, Craig S. ,  Schemenaur, John ,  Senk, David D. ,  Langlois, Marc ,  Hu, Xiaodong ,  Hwang, Jan Tzyy-Jiuan ,  Ready, Jud ,  Tomav, Trifon

IPC: H01C7/00 ,  H01C17/08 ,  H05K1/16

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C7/06 ,  H01C17/08 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0361 ,  Y10T428/261 ,  Y10T428/31678

公开(公告)号：EP1278215A3

公开(公告)日：2003-09-17

申请号：EP02254713.7

申请日：2002-07-04

Applicant: Shipley Co. L.L.C.

Inventor： Allen, Craig S. ,  Schemenauer, John ,  Senk, David D. ,  Langlois, Marc ,  Hu, Xiaodong ,  Hwang, Jan Tzyy-Jiuan ,  Ready, Jud ,  Tomav, Trifon

IPC: H01C7/00 ,  H01C17/08 ,  H05K1/16

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C7/06 ,  H01C17/08 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0361 ,  Y10T428/261 ,  Y10T428/31678

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

公开(公告)号：EP1327995A2

公开(公告)日：2003-07-16

申请号：EP03250174.4

申请日：2003-01-10

Applicant: Shipley Co. L.L.C.

Inventor： Schemenaur, John ,  Hariharan, Rajan ,  Langlois, Marc ,  Allen, Craig S.

IPC: H01C17/00

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C17/075 ,  H05K3/382 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0338 ,  H05K2203/0361 ,  H05K2203/0723 ,  Y10T428/12431 ,  Y10T428/12438

Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 µm and a peak-to-peak wavelength of 2 to 20 µm.

Abstract translation: 公开了一种用于嵌入电介质材料中的电阻结构，该电介质材料包括设置在导电层表面上的薄膜电阻材料，其中该表面具有Rz（din）值为3-10μm的各向同性表面粗糙度， 峰值波长为2〜20μm。