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公开(公告)号：EP1316976A1
公开(公告)日：2003-06-04
申请号：EP02258033.6
申请日：2002-11-21
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Rzeznik, Maria Anna , Jacques, David L.
CPC classification number: H01G4/06 , H05K1/162 , H05K3/181 , H05K3/381 , H05K2201/0116 , H05K2201/0195 , H05K2201/0212 , H05K2201/0236 , H05K2201/0355 , H05K2203/0773
Abstract: Dielectric structures (20,25) particularly suitable for use in capacitors and having a textured surface (30) are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.
Abstract translation: 提供介电结构（20.25）特别适合于在电容器的使用和具有纹理化表面（30），与形成结构论文的方法一起。 搜索介电结构显示增加的随后施加的导电层的密合性。
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公开(公告)号：EP1278215A2
公开(公告)日：2003-01-22
申请号：EP02254713.7
申请日：2002-07-04
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Schemenauer, John , Senk, David D. , Langlois, Marc , Hu, Xiaodong , Hwang, Jan Tzyy-Jiuan , Ready, Jud , Tomav, Trifon
CPC classification number: H05K1/167 , H01C7/006 , H01C7/06 , H01C17/08 , H05K2201/0317 , H05K2201/0355 , H05K2203/0361 , Y10T428/261 , Y10T428/31678
Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.
Abstract translation: 公开了包含铂和约5和约70摩尔％的铱，钌或其混合物的电阻材料，其基于铂为100％计算。
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公开(公告)号：EP1315407A3
公开(公告)日：2005-05-25
申请号：EP02258032.8
申请日：2002-11-21
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Rzeznik, Maria Anna , Cairns, S. Matthew
CPC classification number: H05K1/162 , H01G4/06 , H01L21/2885 , H01L28/56 , H01L28/60 , H05K3/181 , H05K2201/0195 , H05K2201/0236 , H05K2201/09309
Abstract: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.
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Patent Agency Ranking
公开(公告)号：EP1327995A2
公开(公告)日：2003-07-16
申请号：EP03250174.4
申请日：2003-01-10
Applicant: Shipley Co. L.L.C.
Inventor： Schemenaur, John , Hariharan, Rajan , Langlois, Marc , Allen, Craig S.
IPC: H01C17/00
CPC classification number: H05K1/167 , H01C7/006 , H01C17/075 , H05K3/382 , H05K2201/0355 , H05K2203/0307 , H05K2203/0338 , H05K2203/0361 , H05K2203/0723 , Y10T428/12431 , Y10T428/12438
Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 µm and a peak-to-peak wavelength of 2 to 20 µm.
Abstract translation: 公开了一种用于嵌入电介质材料中的电阻结构，该电介质材料包括设置在导电层表面上的薄膜电阻材料，其中该表面具有Rz（din）值为3-10μm的各向同性表面粗糙度， 峰值波长为2〜20μm。
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公开(公告)号：EP1327995A3
公开(公告)日：2005-10-12
申请号：EP03250174.4
申请日：2003-01-10
Applicant: Shipley Co. L.L.C.
Inventor： Schemenaur, John , Hariharan, Rajan , Langlois, Marc , Allen, Craig S.
IPC: H01C17/00
CPC classification number: H05K1/167 , H01C7/006 , H01C17/075 , H05K3/382 , H05K2201/0355 , H05K2203/0307 , H05K2203/0338 , H05K2203/0361 , H05K2203/0723 , Y10T428/12431 , Y10T428/12438
Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 µm and a peak-to-peak wavelength of 2 to 20 µm.
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公开(公告)号：EP1278215B1
公开(公告)日：2004-10-13
申请号：EP02254713.7
申请日：2002-07-04
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Schemenaur, John , Senk, David D. , Langlois, Marc , Hu, Xiaodong , Hwang, Jan Tzyy-Jiuan , Ready, Jud , Tomav, Trifon
CPC classification number: H05K1/167 , H01C7/006 , H01C7/06 , H01C17/08 , H05K2201/0317 , H05K2201/0355 , H05K2203/0361 , Y10T428/261 , Y10T428/31678
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公开(公告)号：EP1278215A3
公开(公告)日：2003-09-17
申请号：EP02254713.7
申请日：2002-07-04
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Schemenauer, John , Senk, David D. , Langlois, Marc , Hu, Xiaodong , Hwang, Jan Tzyy-Jiuan , Ready, Jud , Tomav, Trifon
CPC classification number: H05K1/167 , H01C7/006 , H01C7/06 , H01C17/08 , H05K2201/0317 , H05K2201/0355 , H05K2203/0361 , Y10T428/261 , Y10T428/31678
Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.
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公开(公告)号：EP1315407A2
公开(公告)日：2003-05-28
申请号：EP02258032.8
申请日：2002-11-21
Applicant: Shipley Co. L.L.C.
Inventor： Allen, Craig S. , Rzeznik, Maria Anna , Cairns, S. Matthew
CPC classification number: H05K1/162 , H01G4/06 , H01L21/2885 , H01L28/56 , H01L28/60 , H05K3/181 , H05K2201/0195 , H05K2201/0236 , H05K2201/09309
Abstract: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.
Abstract translation: 提供特别适用于电容器并具有足以促进导电层镀覆的电镀掺杂剂的多层电介质结构，以及形成这种结构的方法。 这种电介质结构显示随后施加的导电层的附着力增加。
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