Abstract:
Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.
Abstract:
Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.
Abstract:
Dielectric structures (20,25) particularly suitable for use in capacitors and having a textured surface (30) are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.